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IRFB3206
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FabricanteInfineon / IR
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Peça do Fabricante #IRFB3206
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Ficha Técnica IRFB3206 DataSheet
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Especificações
| Atributo | Valor |
| Brand | Infineon / IR |
| ProductType | MOSFETs |
| Subcategory | Transistors |
| Technology | Si |
| MountingStyle | Through Hole |
| Package/Case | TO-220-3 |
| TransistorPolarity | N-Channel |
| NumberofChannels | 1 Channel |
| Vds-Drain-SourceBreakdownVoltage | 60 V |
| Id-ContinuousDrainCurrent | 210 A |
| RdsOn-Drain-SourceResistance | 3 mOhms |
| Vgs-Gate-SourceVoltage | - 20 V, + 20 V |
| MinimumOperatingTemperature | - 55 C |
| MaximumOperatingTemperature | + 175 C |
| Pd-PowerDissipation | 300 W |
| ChannelMode | Enhancement |
| Configuration | Single |
| FallTime | 83 ns |
| Height | 15.65 mm |
| Length | 10 mm |
| RiseTime | 82 ns |
| TransistorType | 1 N-Channel |
| TypicalTurn-OffDelayTime | 55 ns |
| TypicalTurn-OnDelayTime | 19 ns |
| Width | 4.4 mm |
| UnitWeight | 0.068784 oz |
Visão Geral
Description
Students are encouraged to analyze historical and contemporary events through various theoretical lenses including realism, liberalism, and constructivism. The course often emphasizes critical thinking and analytical skills, enabling students to understand the complexities of international politics and diplomacy.
Moreover, IRFB3206 may involve case studies, encouraging discussions on current global challenges like climate change, conflict resolution, and human rights. Overall, the course aims to equip students with a foundational understanding of international relations, preparing them for advanced studies or careers in related fields.
Equivalent
Features
1. Voltage Rating: It typically has a maximum drain-source voltage (VDS) of 60V, making it suitable for medium voltage applications.
2. Current Rating: The continuous drain current (ID) is around 120A, allowing it to handle significant loads.
3. Low RDS(on): Its low on-resistance (RDS(on)) value, typically around 5.5 mΩ, reduces power losses and improves efficiency.
4. Fast Switching: Designed for quick switching operations, making it ideal for high-frequency applications.
5. Thermal Performance: It has a high junction-to-ambient thermal resistance, enhancing its ability to dissipate heat.
6. Package Type: Available in a TO-220 package, which allows for easy mounting and good thermal management.
These features make the IRFB3206 suitable for use in power supplies, motor controllers, and other high-efficiency electronic circuits.
Pinout
1. Gate (G) - Controls the switching of the MOSFET.
2. Drain (D) - The output pin where the load is connected and through which the current flows when the device is on.
3. Source (S) - Connected to ground or the negative side of the power supply, completing the circuit with the drain.
The IRFB3206 is known for its low on-resistance (R_DS(on)) and high current-carrying capability, making it suitable for applications such as power management, DC-DC converters, and motor drives.
Manufacturer
Infineon focuses on providing innovative solutions for energy efficiency, mobility, and security, catering to various industries, including automotive, industrial, and consumer electronics. Their product portfolio includes MOSFETs, IGBTs, microcontrollers, and sensors, among others. The IRFB3206 is a N-channel MOSFET specifically designed for high-efficiency power management applications, making it suitable for use in areas like power supplies, motor drives, and renewable energy systems.
Infineon has a strong commitment to research and development, continuously advancing semiconductor technology to meet the growing demands for efficiency and performance in modern electronics.
Application
1. Power Supply Circuits: Used in switch-mode power supplies (SMPS) for voltage regulation.
2. Motor Drives: Employed in DC brushless motors and electric vehicle drives.
3. Inverters: Utilized in solar inverters and uninterruptible power supplies (UPS).
4. DC-DC Converters: Integral in step-down (buck) and step-up (boost) converters for efficient power conversion.
5. Class D Amplifiers: Used in audio amplification for efficient signal processing.
Its low on-resistance and fast switching speeds enhance performance in these applications.