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IRFB4110
+Lista de MateriaisMOSFET N-CH 100V 120A TO220AB
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FabricanteUMW
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Peça do Fabricante #IRFB4110
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Ficha Técnica IRFB4110 DataSheet
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Especificações
| Atributo | Valor |
| PartStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 100 V |
| Current-ContinuousDrain(Id)@25°C | 120A (Tc) |
| DriveVoltage(MaxRdsOn,MinRdsOn) | 10V |
| RdsOn(Max)@Id,Vgs | 4.5mOhm @ 75A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| Vgs(Max) | ±20V |
| PowerDissipation(Max) | 370W (Tc) |
| OperatingTemperature | -55°C ~ 155°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-220AB |
| Package/Case | TO-220-3 |
Visão Geral
Description
The IRFB4110 is a type of power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) produced by International Rectifier, which is now part of Infineon Technologies. It is designed for high-efficiency power management and switching applications. Key features include a low on-resistance of approximately 4.5 milliohms and high current handling capability, making it suitable for high-power applications such as motor drives, power supplies, and DC-DC converters.
The IRFB4110 is an N-channel MOSFET, meaning it conducts current when a positive voltage is applied to its gate relative to its source. It is capable of operating at a maximum drain-source voltage (V_ds) of 100V and a continuous drain current (I_d) of 180A, under certain conditions. This MOSFET also offers a fast switching speed and high avalanche energy rating, enhancing its reliability in demanding environments. Its TO-220 package allows for efficient heat dissipation, and it is compatible with standard through-hole soldering processes. Overall, the IRFB4110 is valued for its robustness, efficiency, and versatility in power electronics.
The IRFB4110 is an N-channel MOSFET, meaning it conducts current when a positive voltage is applied to its gate relative to its source. It is capable of operating at a maximum drain-source voltage (V_ds) of 100V and a continuous drain current (I_d) of 180A, under certain conditions. This MOSFET also offers a fast switching speed and high avalanche energy rating, enhancing its reliability in demanding environments. Its TO-220 package allows for efficient heat dissipation, and it is compatible with standard through-hole soldering processes. Overall, the IRFB4110 is valued for its robustness, efficiency, and versatility in power electronics.
Equivalent
The IRFB4110 is a N-channel MOSFET commonly used for high power applications. Equivalent or similar products may include:
1. IRFB4127 by Infineon Technologies
2. IRFB3077 by Infineon Technologies
3. AOT290L by Alpha & Omega Semiconductor
4. FDP2532 by ON Semiconductor
5. STP140NF75 by STMicroelectronics
Ensure compatibility by checking specific electrical characteristics like voltage, current ratings, and Rds(on) values in the datasheets of these alternatives.
1. IRFB4127 by Infineon Technologies
2. IRFB3077 by Infineon Technologies
3. AOT290L by Alpha & Omega Semiconductor
4. FDP2532 by ON Semiconductor
5. STP140NF75 by STMicroelectronics
Ensure compatibility by checking specific electrical characteristics like voltage, current ratings, and Rds(on) values in the datasheets of these alternatives.
Features
The IRFB4110 is a power MOSFET known for its high efficiency and robust performance. Here are its key features:
1. Voltage and Current Ratings: It operates with a drain-source voltage (Vds) of 100V and can handle a continuous drain current (Id) of up to 180A at 25°C.
2. RDS(on): It features a very low on-resistance (RDS(on)) of approximately 4.5 mΩ, which helps reduce power losses and improve efficiency.
3. Package Type: The MOSFET is available in a TO-220 package, which is common for power applications due to its good thermal performance.
4. High-Speed Switching: The device is designed for fast switching applications, enhancing performance in high-frequency circuits.
5. Thermal Performance: It has excellent thermal stability and can dissipate significant power, making it suitable for demanding applications.
6. Applications: It is widely used in DC-DC converters, motor control circuits, and other power management applications.
These features make the IRFB4110 a popular choice for power electronics applications requiring high efficiency and reliability.
1. Voltage and Current Ratings: It operates with a drain-source voltage (Vds) of 100V and can handle a continuous drain current (Id) of up to 180A at 25°C.
2. RDS(on): It features a very low on-resistance (RDS(on)) of approximately 4.5 mΩ, which helps reduce power losses and improve efficiency.
3. Package Type: The MOSFET is available in a TO-220 package, which is common for power applications due to its good thermal performance.
4. High-Speed Switching: The device is designed for fast switching applications, enhancing performance in high-frequency circuits.
5. Thermal Performance: It has excellent thermal stability and can dissipate significant power, making it suitable for demanding applications.
6. Applications: It is widely used in DC-DC converters, motor control circuits, and other power management applications.
These features make the IRFB4110 a popular choice for power electronics applications requiring high efficiency and reliability.
Pinout
The IRFB4110 is a power MOSFET designed for high-efficiency applications. It typically comes in a TO-220 package, which features three pins. Here are the pin functions:
1. Gate (G): This pin is used to control the MOSFET's switching. Applying a voltage to the gate controls the flow of current between the drain and source.
2. Drain (D): This is the main terminal for current inflow. In operation, the current flows from the drain to the source when the MOSFET is switched on.
3. Source (S): This terminal is the MOSFET's current outflow path. It completes the circuit between the drain and source when the gate is activated.
The IRFB4110 MOSFET is known for its low on-resistance and high current handling capabilities, making it suitable for applications such as motor drives, power supplies, and amplifiers.
1. Gate (G): This pin is used to control the MOSFET's switching. Applying a voltage to the gate controls the flow of current between the drain and source.
2. Drain (D): This is the main terminal for current inflow. In operation, the current flows from the drain to the source when the MOSFET is switched on.
3. Source (S): This terminal is the MOSFET's current outflow path. It completes the circuit between the drain and source when the gate is activated.
The IRFB4110 MOSFET is known for its low on-resistance and high current handling capabilities, making it suitable for applications such as motor drives, power supplies, and amplifiers.
Manufacturer
The IRFB4110 is a power MOSFET originally manufactured by International Rectifier (IR). International Rectifier was a company known for its expertise in power management technology, including the design and production of power semiconductors. The company was founded in 1947 and was a significant player in the electronics industry, particularly in the development of power conversion solutions.
In 2015, International Rectifier was acquired by Infineon Technologies AG, a leading German semiconductor manufacturer. Infineon is recognized for its focus on automotive, industrial power control, power management and multimarket, as well as digital security solutions. The acquisition of International Rectifier allowed Infineon to strengthen its position in the power semiconductor market by expanding its product portfolio and technological capabilities.
Today, products like the IRFB4110 continue to be available under the Infineon brand, benefiting from the combined expertise and resources of both companies.
In 2015, International Rectifier was acquired by Infineon Technologies AG, a leading German semiconductor manufacturer. Infineon is recognized for its focus on automotive, industrial power control, power management and multimarket, as well as digital security solutions. The acquisition of International Rectifier allowed Infineon to strengthen its position in the power semiconductor market by expanding its product portfolio and technological capabilities.
Today, products like the IRFB4110 continue to be available under the Infineon brand, benefiting from the combined expertise and resources of both companies.
Application
The IRFB4110 is a N-channel MOSFET commonly used in applications requiring high efficiency and fast switching. Its primary application areas include:
1. Power Supplies: Used in switch-mode power supplies (SMPS) for efficient power conversion.
2. Motor Control: Ideal for motor drivers in automotive and industrial applications, offering precise control.
3. Inverters: Utilized in solar inverters and uninterruptible power supplies (UPS) for efficient energy conversion.
4. DC-DC Converters: Suitable for high-frequency and high-power conversion.
5. Battery Management: Used in battery protection circuits and charging systems.
6. Audio Amplifiers: Effective in high-power audio amplification for reduced distortion and increased efficiency.
Its high current capacity and low on-resistance make it suitable for applications requiring robust performance and reliability.
1. Power Supplies: Used in switch-mode power supplies (SMPS) for efficient power conversion.
2. Motor Control: Ideal for motor drivers in automotive and industrial applications, offering precise control.
3. Inverters: Utilized in solar inverters and uninterruptible power supplies (UPS) for efficient energy conversion.
4. DC-DC Converters: Suitable for high-frequency and high-power conversion.
5. Battery Management: Used in battery protection circuits and charging systems.
6. Audio Amplifiers: Effective in high-power audio amplification for reduced distortion and increased efficiency.
Its high current capacity and low on-resistance make it suitable for applications requiring robust performance and reliability.
Package
The IRFB4110 is a N-channel MOSFET that comes in a TO-220 package.
