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IRFB4332PBF
+Lista de MateriaisIRFB4332 - 12V-300V N-CHANNEL PO
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FabricanteRectificador Internacional
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Peça do Fabricante #IRFB4332PBF
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Ficha Técnica IRFB4332PBF DataSheet
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Pacote TO-220-3
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Especificações
| Atributo | Valor |
| Package / Case | Bulk |
| Series | HEXFET® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 250 V |
| Current - Continuous Drain(Id) @ 25°C | 60A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 33mOhm @ 35A, 10V |
| Vgs(th)(Max) @ Id | 5V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 150 nC @ 10 V |
| Vgs(Max) | ±30V |
| Input Capacitance(Ciss)(Max) @ Vds | 5860 pF @ 25 V |
| Power Dissipation (Max) | 390W (Tc) |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220AB |
Visão Geral
Description
This MOSFET is often used in applications such as DC-DC converters, power supplies, and motor drives, where efficient energy use is crucial. It operates at a high voltage, typically around 250V, and can handle substantial current levels, making it suitable for medium to high-power applications. The IRFB4332PBF comes in a TO-220 package, providing a compact and versatile solution for circuit designers. Additionally, it is RoHS compliant, ensuring it meets environmental standards for electronic components.
Equivalent
1. STMicroelectronics STP310N10F7
2. ON Semiconductor NTP3055L
3. Infineon IPP045N10N3 G
4. Vishay SiHP33N60E-GE3
Ensure compatibility in terms of voltage, current ratings, and package type when selecting an equivalent. Always consult the datasheets to confirm the specifications match your application's requirements.
Features
1. Voltage Rating: It has a drain-to-source voltage (Vds) of 150V.
2. Current Rating: It can handle a continuous current of up to 180A.
3. RDS(on): The on-state resistance is very low, typically around 6.8 mΩ, which minimizes power loss.
4. Technology: It utilizes advanced HEXFET® technology to provide enhanced performance.
5. Package: Available in a TO-220 package for ease of mounting and heat dissipation.
6. Temperature: The operating junction temperature ranges from -55°C to 175°C.
7. Switching Performance: It offers fast switching speeds, which is advantageous in high-frequency applications.
8. Applications: It is suitable for various applications, including motor control, DC-DC converters, and other high-power operations due to its high current handling and efficiency.
9. Lead-Free: It is RoHS compliant, indicating its lead-free construction for environmentally friendly applications.
These features make the IRFB4332PBF a versatile and reliable choice for power management applications.
Pinout
1. Pin 1 (Gate): This is the gate terminal of the MOSFET. It controls the flow of current between the drain and source. A voltage applied here turns the MOSFET on or off.
2. Pin 2 (Drain): This is the drain terminal. Current flows from the drain to the source when the MOSFET is in the 'on' state.
3. Pin 3 (Source): This is the source terminal. It serves as the return path for the current flowing through the MOSFET.
These pins enable the MOSFET to be used in various high-power applications, such as motor drives, power supplies, and amplifiers. The IRFB4332PBF is known for its low on-state resistance and high efficiency.
Manufacturer
Application
1. Power Supply Units: Utilized in switch-mode power supplies (SMPS) for efficient power conversion.
2. Motor Drives: Employed in controlling and driving motors in industrial and automotive applications.
3. Battery Management Systems: Used in electric vehicles and energy storage for charging and discharging control.
4. Inverters: Applied in solar inverters for converting DC to AC power.
5. DC-DC Converters: Used in voltage regulation and conversion tasks.
6. Uninterruptible Power Supplies (UPS): Employed for seamless power backup solutions.
These applications benefit from the device's high efficiency and reliability in power handling.