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IRFP23N50LPBF
+Lista de MateriaisMOSFET N-CH 500V 23A TO247-3
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FabricanteVishay Siliconix
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Peça do Fabricante #IRFP23N50LPBF
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Especificações
| Atributo | Valor |
| PartStatus | Obsolete |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 500 V |
| Current-ContinuousDrain(Id)@25°C | 23A (Tc) |
| DriveVoltage(MaxRdsOn,MinRdsOn) | 10V |
| RdsOn(Max)@Id,Vgs | 235mOhm @ 14A, 10V |
| Vgs(th)(Max)@Id | 5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 150 nC @ 10 V |
| Vgs(Max) | ±30V |
| InputCapacitance(Ciss)(Max)@Vds | 3600 pF @ 25 V |
| PowerDissipation(Max) | 370W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-247AC |
| Package/Case | TO-247-3 |
| BaseProductNumber | IRFP23 |
Visão Geral
Description
The IRFP23N50LPBF is a high-performance N-channel MOSFET designed for power applications. It features a maximum drain-source voltage (V_DS) of 500V and a continuous drain current (I_D) of 23A, making it suitable for high-voltage and high-current switching applications. Its low on-resistance (R_DS(on)) enhances efficiency by minimizing power loss during operation.
This MOSFET is often used in various applications, including power supplies, motor drivers, and inverter circuits. It offers fast switching capabilities, which are essential for efficient energy conversion. The device is packaged in a TO-220 format, allowing for effective heat dissipation, which is critical for maintaining performance under load.
The IRFP23N50LPBF is also noted for its robustness and reliability, making it a popular choice among engineers for designing reliable electronic systems. Its compatibility with standard gate drive voltages makes it easier to integrate into existing designs. Overall, this MOSFET is an excellent component for those looking to optimize performance in high-power electronic applications.
This MOSFET is often used in various applications, including power supplies, motor drivers, and inverter circuits. It offers fast switching capabilities, which are essential for efficient energy conversion. The device is packaged in a TO-220 format, allowing for effective heat dissipation, which is critical for maintaining performance under load.
The IRFP23N50LPBF is also noted for its robustness and reliability, making it a popular choice among engineers for designing reliable electronic systems. Its compatibility with standard gate drive voltages makes it easier to integrate into existing designs. Overall, this MOSFET is an excellent component for those looking to optimize performance in high-power electronic applications.
Equivalent
The IRFP23N50LPBF is an N-channel MOSFET with a voltage rating of 500V and a continuous drain current of 23A. Equivalent products include the STP23NM50, FQP23N50, and AUIRF23N50. These alternatives should have similar voltage ratings and current-carrying capabilities. Always verify specifications for exact matching based on your application requirements.
Features
The IRFP23N50LPBF is a N-channel MOSFET designed for high-performance applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 500V, making it suitable for high-voltage applications.
2. Continuous Drain Current: It can handle a continuous drain current (I_D) of up to 23A at a specified temperature.
3. R_DS(on): The on-state resistance is low, typically around 0.47 Ohms, which helps reduce power losses during operation.
4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) ranges from 2V to 4V, allowing for easy driving with standard logic levels.
5. Fast Switching Speed: The device offers rapid switching capabilities, beneficial in applications like power supplies and motor control.
6. Package Type: It comes in a TO-220 package, ensuring good thermal performance and ease of mounting.
These features make the IRFP23N50LPBF suitable for various applications, including power inverters, converters, and industrial switching applications.
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 500V, making it suitable for high-voltage applications.
2. Continuous Drain Current: It can handle a continuous drain current (I_D) of up to 23A at a specified temperature.
3. R_DS(on): The on-state resistance is low, typically around 0.47 Ohms, which helps reduce power losses during operation.
4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) ranges from 2V to 4V, allowing for easy driving with standard logic levels.
5. Fast Switching Speed: The device offers rapid switching capabilities, beneficial in applications like power supplies and motor control.
6. Package Type: It comes in a TO-220 package, ensuring good thermal performance and ease of mounting.
These features make the IRFP23N50LPBF suitable for various applications, including power inverters, converters, and industrial switching applications.
Pinout
The IRFP23N50LPBF is an N-channel MOSFET with a total of 3 pins. The pin configuration and their functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate allows current to flow from the drain to the source.
2. Drain (D): This pin is where the load is connected. The current flows from the drain to the source when the MOSFET is turned on.
3. Source (S): This pin is connected to the ground or the negative side of the power supply. Current exits the MOSFET through this pin when it is conducting.
The IRFP23N50LPBF is designed for high-voltage applications, with a maximum drain-source voltage (V_DS) of 500V and can handle a continuous drain current (I_D) of up to 23A. It is often used in power supply circuits and motor control applications.
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate allows current to flow from the drain to the source.
2. Drain (D): This pin is where the load is connected. The current flows from the drain to the source when the MOSFET is turned on.
3. Source (S): This pin is connected to the ground or the negative side of the power supply. Current exits the MOSFET through this pin when it is conducting.
The IRFP23N50LPBF is designed for high-voltage applications, with a maximum drain-source voltage (V_DS) of 500V and can handle a continuous drain current (I_D) of up to 23A. It is often used in power supply circuits and motor control applications.
Manufacturer
The IRFP23N50LPBF is manufactured by Infineon Technologies AG, a leading global semiconductor manufacturer. Infineon is known for its expertise in power semiconductors, automotive electronics, and security solutions. The company focuses on providing innovative solutions for a variety of applications, including energy efficiency, mobility, and security. Founded in 1999 and headquartered in Neubiberg, Germany, Infineon has a strong presence in the semiconductor industry, serving markets such as automotive, industrial power control, and the Internet of Things (IoT). Their products are critical in enabling sustainable energy technologies and enhancing overall system efficiency.
Application
The IRFP23N50LPBF is a high-voltage N-channel MOSFET primarily used in power electronics applications. Its key areas include:
1. Switching Power Supplies: Efficient conversion of electrical power in various applications.
2. Motor Drives: Control of DC and AC motors in industrial and automotive settings.
3. Inverters: Used in renewable energy systems like solar and wind for DC to AC conversion.
4. Lighting Control: Applications in LED drivers and dimmers.
5. Class D Audio Amplifiers: For efficient audio amplification in entertainment systems.
Its high voltage rating (500V) and low on-resistance make it suitable for high-performance designs.
1. Switching Power Supplies: Efficient conversion of electrical power in various applications.
2. Motor Drives: Control of DC and AC motors in industrial and automotive settings.
3. Inverters: Used in renewable energy systems like solar and wind for DC to AC conversion.
4. Lighting Control: Applications in LED drivers and dimmers.
5. Class D Audio Amplifiers: For efficient audio amplification in entertainment systems.
Its high voltage rating (500V) and low on-resistance make it suitable for high-performance designs.
Package
The IRFP23N50LPBF is packaged in a TO-220 format. This package type is designed for high power applications, offering good thermal performance and easy mounting on heatsinks.
