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IRFR120ZTRPBF
+Lista de MateriaisMOSFET N-CH 100V 8.7A DPAK
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FabricanteTecnologias Infineon
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Peça do Fabricante #IRFR120ZTRPBF
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Especificações
| Atributo | Valor |
| Series | HEXFET® |
| Part Status | Last Time Buy |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain (Id) @ 25°C | 8.7A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 190mOhm @ 5.2A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 10 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 310 pF @ 25 V |
| Power Dissipation (Max) | 35W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-252AA (DPAK) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Base Product Number | IRFR120 |
Visão Geral
Description
The IRFR120ZTRPBF is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency switching applications. It features a maximum drain-source voltage (V_DS) of 55V and a continuous drain current (I_D) of 120A, making it suitable for power management in various electronic circuits, including DC-DC converters and motor drives.
Its low on-resistance (R_DS(on)) minimizes power losses, improving overall efficiency. The MOSFET is housed in a TO-220 package, facilitating easy heat dissipation. The IRFR120ZTRPBF is often utilized in automotive and industrial applications due to its reliability and robustness in demanding environments.
Moreover, it is RoHS-compliant, aligning with environmental standards for hazardous substances. This component is ideal for engineers seeking a reliable transistor for high-performance applications, balancing power handling capabilities with compact design.
Its low on-resistance (R_DS(on)) minimizes power losses, improving overall efficiency. The MOSFET is housed in a TO-220 package, facilitating easy heat dissipation. The IRFR120ZTRPBF is often utilized in automotive and industrial applications due to its reliability and robustness in demanding environments.
Moreover, it is RoHS-compliant, aligning with environmental standards for hazardous substances. This component is ideal for engineers seeking a reliable transistor for high-performance applications, balancing power handling capabilities with compact design.
Equivalent
Equivalent products to the IRFR120ZTRPBF include the IRF3205, IRF140, and STP75NF75. These MOSFETs share similar voltage and current ratings, making them suitable alternatives. Always verify specifications such as RDS(on), VGS, and power ratings for compatibility with your specific application.
Features
The IRFR120ZTRPBF is an N-channel MOSFET designed for low-voltage applications. Key features include:
1. Voltage Rating: It can handle a maximum drain-source voltage (V_DS) of 60V, making it suitable for various power applications.
2. Current Rating: The device supports continuous drain current (I_D) of up to 120A, allowing it to manage significant loads.
3. R_DS(on): It boasts a low on-resistance (typically 0.018 ohms at V_GS = 10V), which enhances efficiency by reducing conduction losses.
4. Gate Threshold Voltage: It has a V_GS(th) range of 2V to 4V, enabling efficient switching at lower gate voltages.
5. Fast Switching: The MOSFET supports rapid switching speeds, making it ideal for high-frequency applications.
6. Package Type: Available in a TO-220 package, facilitating easy heat dissipation and mounting.
7. Applications: Commonly used in power supplies, motor drivers, and automotive applications.
Overall, the IRFR120ZTRPBF is designed for high performance and efficiency in modern electronic circuits.
1. Voltage Rating: It can handle a maximum drain-source voltage (V_DS) of 60V, making it suitable for various power applications.
2. Current Rating: The device supports continuous drain current (I_D) of up to 120A, allowing it to manage significant loads.
3. R_DS(on): It boasts a low on-resistance (typically 0.018 ohms at V_GS = 10V), which enhances efficiency by reducing conduction losses.
4. Gate Threshold Voltage: It has a V_GS(th) range of 2V to 4V, enabling efficient switching at lower gate voltages.
5. Fast Switching: The MOSFET supports rapid switching speeds, making it ideal for high-frequency applications.
6. Package Type: Available in a TO-220 package, facilitating easy heat dissipation and mounting.
7. Applications: Commonly used in power supplies, motor drivers, and automotive applications.
Overall, the IRFR120ZTRPBF is designed for high performance and efficiency in modern electronic circuits.
Pinout
The IRFR120ZTRPBF is an N-channel MOSFET that features a total of 3 pins. The pin configuration is as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate allows current to flow from the drain to the source, enabling or disabling the device.
2. Drain (D): This pin is where the current enters the MOSFET from the load when it is turned on.
3. Source (S): This pin is the output of the MOSFET where the current exits to ground or the circuit.
The IRFR120ZTRPBF is designed for high-speed switching applications and is suitable for power management in various electronic devices. It features a low on-resistance, making it efficient for high-current applications.
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate allows current to flow from the drain to the source, enabling or disabling the device.
2. Drain (D): This pin is where the current enters the MOSFET from the load when it is turned on.
3. Source (S): This pin is the output of the MOSFET where the current exits to ground or the circuit.
The IRFR120ZTRPBF is designed for high-speed switching applications and is suitable for power management in various electronic devices. It features a low on-resistance, making it efficient for high-current applications.
Manufacturer
The IRFR120ZTRPBF is manufactured by International Rectifier, which is a part of Infineon Technologies AG. International Rectifier specializes in power management and semiconductor solutions, focusing on products like MOSFETs, IGBTs, and analog ICs. The company is known for its expertise in power electronics, serving various sectors including automotive, industrial, and consumer electronics. Infineon, based in Germany, is a global leader in semiconductor solutions, providing innovative products for efficient energy management and advanced automotive technologies.
Application
The IRFR120ZTRPBF is an N-channel MOSFET primarily used in power management applications. Its application areas include DC-DC converters, motor drives, power supplies, and switching applications. It is suitable for use in consumer electronics, automotive systems, and industrial automation due to its low on-resistance and fast switching capabilities. Additionally, it can be employed in high-efficiency power circuits and as a switch in various load control applications.
Package
The IRFR120ZTRPBF is packaged in a TO-220 style casing. This package type is commonly used for power MOSFETs, providing effective heat dissipation and easy mounting options for various applications.
