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IRFR3709ZTRPBF
+Lista de MateriaisMOSFET N-CH 30V 86A DPAK
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FabricanteTecnologias Infineon
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Peça do Fabricante #IRFR3709ZTRPBF
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Especificações
| Atributo | Valor |
| Supplier | Infineon Technologies |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | HEXFET® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain(Id) @ 25°C | 86A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 6.5mOhm @ 15A, 10V |
| Vgs(th)(Max) @ Id | 2.25V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 26 nC @ 4.5 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 2330 pF @ 15 V |
| Power Dissipation (Max) | 79W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | D-Pak |
Visão Geral
Description
Equivalent
Features
- N-channel, enhancement-mode power MOSFET
- 30 V drain–source voltage rating
- Very low on-resistance for high-efficiency operation
- High continuous current capability
- Logic-level gate drive (fully on at practical gate voltages)
- Fast switching performance
- Avalanche-rated ruggedness for inductive loads
- Pb-free, RoHS compliant
- Package: DPAK (TO-252) with Tape & Reel (TRPBF) packaging
Ideal for DC-DC converters, motor control, and other high-current switching applications.
Pinout
- Pinout: Pin 1 = Gate, Pin 2 = Drain (also the tab), Pin 3 = Source
- Function: N-channel enhancement-mode MOSFET (used as a switching/low-side or high-side switch in power circuits)
Manufacturer
Application
- Switching regulators and DC-DC converters (buck/boost) for power supplies
- Motor drive and PWM switching for DC motors and stepper systems
- Load switches and power-path management in battery-powered devices
- Solar/battery power management, inverters, and energy conditioning
- General purpose high-efficiency switching in consumer, industrial, and telecom equipment
These cover portable electronics, industrial automation, and automotive-related power management where a low Rds(on) MOSFET is beneficial.