IRFZ34NSTRLPBF

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IRFZ34NSTRLPBF

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MOSFET N-CH 55V 29A D2PAK

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Especificações

Atributo Valor
Package / Case Tape & Reel (TR),Cut Tape (CT)
Series HEXFET®
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V
Current - Continuous Drain(Id) @ 25°C 29A (Tc)
Drive Voltage(Max Rds On Min Rds On) 10V
Rds On(Max) @ Id Vgs 40mOhm @ 16A, 10V
Vgs(th)(Max) @ Id 4V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 34 nC @ 10 V
Vgs(Max) ±20V
Input Capacitance(Ciss)(Max) @ Vds 700 pF @ 25 V
Power Dissipation (Max) 3.8W (Ta), 68W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK

Visão Geral

Description

The IRFZ34NSTRLPBF is an N-channel power MOSFET from Infineon Technologies, designed for high-efficiency switching applications. Key features include:
- Voltage Rating: 55V (Drain-to-Source, VDS)
- Current Rating: 30A (continuous drain current, ID)
- Low On-Resistance: 35mΩ (max at VGS = 10V)
- Fast Switching: Optimized for high-speed performance.
- Package: TO-263 (D2PAK), suitable for surface-mount applications.
Common uses include power supplies, motor control, DC-DC converters, and load switching. Its low RDS(on) minimizes conduction losses, improving efficiency. The device is RoHS-compliant and features a logic-level gate drive (fully enhanced at 10V).
For detailed specs, refer to the datasheet.

Equivalent

Equivalent products to the IRFZ34NSTRLPBF (N-channel MOSFET, 55V, 30A) include:
- IRFZ34NPBF (same specs, different package)
- IRFZ44NPBF (higher voltage, 55V, 49A)
- STP55NF06L (55V, 50A, lower RDS(on))
- FQP30N06L (60V, 32A, similar characteristics)
Check datasheets for exact compatibility in your application.

Pinout

The IRFZ34NSTRLPBF is a N-channel MOSFET in a TO-262 (TO-263AB, D²PAK) package with 3 pins:
1. Gate (G) – Controls the switching operation.
2. Drain (D) – Connects to the load (high current path).
3. Source (S) – Ground/reference terminal.
Key Features:
- 55V Drain-Source Voltage (VDS)
- 35A Continuous Drain Current (ID)
- Low On-Resistance (RDS(on) = 44mΩ @ 10V VGS)
- Fast switching for power applications
Commonly used in DC-DC converters, motor control, and power switching circuits.

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