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IRG4PF50WPBF
+Lista de MateriaisIGBT 900V 51A 200W TO247AC
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FabricanteTecnologias Infineon
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Peça do Fabricante #IRG4PF50WPBF
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Ficha Técnica IRG4PF50WPBF DataSheet
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Pacote TO-247-3
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Especificações
| Atributo | Valor |
| Package | Tube |
| ProductStatus | Obsolete |
| Voltage-CollectorEmitterBreakdown(Max) | 900 V |
| Current-Collector(Ic)(Max) | 51 A |
| Current-CollectorPulsed(Icm) | 204 A |
| Vce(on)(Max)@VgeIc | 2.7V @ 15V, 28A |
| Power-Max | 200 W |
| SwitchingEnergy | 190µJ (on), 1.06mJ (off) |
| InputType | Standard |
| GateCharge | 160 nC |
| Td(on/off)@25°C | 29ns/110ns |
| TestCondition | 720V, 28A, 5Ohm, 15V |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Through Hole |
| Package/Case | TO-247-3 |
Visão Geral
Equivalent
- IRG4PC50WPBF (600V, 55A)
- IRG4PC50UDPBF (600V, 55A, Ultrafast)
- STGW40H60DF (600V, 40A, STMicro)
- FGA40N60SMD (600V, 40A, Fairchild/ON Semi)
- HGTG40N60B3 (600V, 75A, Fairchild/ON Semi)
Check datasheets for exact specs and pin compatibility.
Features
- Voltage Rating: 500V (VCES)
- Current Rating: 44A (IC @ 25°C)
- Low VCE(sat): 1.65V (typical) for reduced conduction losses
- Fast Switching: Optimized for high-frequency applications
- Robust Design: High short-circuit withstand capability (10µs)
- Temperature Range: -55°C to +150°C (Tj)
- Package: TO-247AC (isolated tab for easier mounting)
- Applications: Motor drives, inverters, UPS, and welding equipment
It combines low switching losses with high efficiency, making it suitable for power electronics.
Manufacturer
The IRG4PF50WPBF is an IGBT (Insulated Gate Bipolar Transistor) designed for power switching applications.