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IRGP4640D-EPBF
+Lista de MateriaisIGBT 600V 65A TO-247AC
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FabricanteTecnologias Infineon
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Peça do Fabricante #IRGP4640D-EPBF
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Ficha Técnica IRGP4640D-EPBF DataSheet
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Especificações
| Atributo | Valor |
| Part Status | Obsolete |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector (Ic) (Max) | 65 A |
| Vce(on) (Max) @ Vge, Ic | 1.9V @ 15V, 24A |
| Power - Max | 250 W |
| Switching Energy | 115µJ (on), 600µJ (off) |
| Input Type | Standard |
| Gate Charge | 75 nC |
| Td (on / off) @ 25°C | 41ns/104ns |
| Test Condition | 400V, 24A, 10Ohm, 15V |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Supplier Device Package | TO-247AC |
| Base Product Number | IRGP4640 |
| Current - Collector Pulsed (Icm) | 72 A |
| Reverse Recovery Time (trr) | 89 ns |
Visão Geral
Description
The "EPBF" designation indicates that the MOSFET is part of a family of products that are environmentally friendly, adhering to RoHS standards, which restrict hazardous substances. It comes in a TO-220 package format, allowing for effective heat dissipation. Overall, IRGP4640D-EPBF is a reliable choice for engineers seeking robust performance in modern electronic designs.
Equivalent
Features
1. Voltage Rating: 600V, suitable for various power conversion applications.
2. Current Rating: 40A, allowing for robust performance in high-load scenarios.
3. Low Conduction Losses: Optimized for lower switching losses, enhancing overall efficiency.
4. Fast Switching Performance: Enables high-frequency operation, improving the response time in power circuits.
5. Thermal Management: Features a low thermal resistance for better heat dissipation, ensuring reliability in demanding environments.
6. Robust Gate Protection: Integrated ESD protection to enhance durability against voltage spikes.
7. Easy to Drive: Standard gate drive requirements facilitate integration into existing designs.
These features make the IRGP4640D-EPBF ideal for applications such as motor drives, power inverters, and other power management systems.
Pinout
1. Gate (G) - Controls the MOSFET's on/off state.
2. Drain (D) - The terminal through which the current exits the device.
3. Source (S) - The terminal through which the current enters the device.
4. Body Diode - Not a pin but an intrinsic feature that provides reverse current conduction.
Key characteristics include a high voltage rating (up to 40V), low R_DS(on), and fast switching capabilities, making it suitable for high-efficiency applications. Always refer to the manufacturer's datasheet for specific electrical characteristics and applications.