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IRLML2502TR
+Lista de MateriaisMOSFET N-CH 20V 4.2A SOT-23
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FabricanteTecnologias Infineon
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Peça do Fabricante #IRLML2502TR
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Especificações
| Atributo | Valor |
| Supplier | Infineon Technologies |
| Package / Case | Cut Tape (CT) |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20 V |
| Current - Continuous Drain(Id) @ 25°C | 4.2A (Ta) |
| Rds On(Max) @ Id Vgs | 45mOhm @ 4.2A, 4.5V |
| Vgs(th)(Max) @ Id | 1.2V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 12 nC @ 5 V |
| Input Capacitance(Ciss)(Max) @ Vds | 740 pF @ 15 V |
| Mounting Type | Surface Mount |
| Supplier Device Package | Micro3™/SOT-23 |
Visão Geral
Description
Key features of the IRLML2502TR include a low on-resistance, which minimizes power loss and improves efficiency, and a fast switching speed, which makes it suitable for high-frequency applications. It is typically used in applications like DC-DC converters, load switches, and power management in consumer electronics, automotive systems, and other industrial applications.
The package type for the IRLML2502TR is usually a surface-mount technology (SMT), which allows for easy integration into printed circuit boards (PCBs). Its robustness and reliability make it a popular choice among engineers looking for effective power management solutions in compact electronic devices.
Equivalent
1. 2N7002 - a similar small-signal N-channel MOSFET.
2. BSS138 - another N-channel MOSFET with comparable specifications.
3. NTR4170N - offers similar functionality in a different package.
4. SI2302 - an equivalent N-channel MOSFET with similar voltage and current ratings.
Ensure to compare parameters like voltage, current, Rds(on), and package to verify compatibility.
Features
1. Package: It comes in a compact SOT-23 package, making it suitable for space-constrained designs.
2. VDS: The device supports a drain-source voltage (V_DS) of up to 20V.
3. ID: It can handle continuous drain current (I_D) up to 3.3A at 25°C.
4. RDS(on): The MOSFET has a low on-resistance (R_DS(on)) of about 0.045 ohms at V_GS = 4.5V, which helps in reducing power loss.
5. Gate-Source Voltage: The maximum gate-source voltage (V_GS) is ±12V.
6. Thermal Performance: The device features good thermal performance, allowing efficient heat dissipation.
7. Applications: It is commonly used in DC-DC converters, load switch applications, and low voltage switching applications.
These features make the IRLML2502TR suitable for various portable and small-scale electronic devices that require efficient and high-performance switching components.
Pinout
1. Gate (G): This pin controls the MOSFET's conduction state. Applying a voltage here determines whether the MOSFET is on or off.
2. Drain (D): This is the main current-carrying terminal. When the MOSFET is in the "on" state, current flows from drain to source.
3. Source (S): This terminal is connected to the ground or a low voltage in a circuit, serving as the return path for the current flowing through the MOSFET.
The IRLML2502TR is commonly used for switching and amplification applications in electronic devices due to its small size and efficient performance characteristics.