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IRLML6346
+Lista de MateriaisMOSFETs
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FabricanteTecnologias Infineon
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Peça do Fabricante #IRLML6346
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Ficha Técnica IRLML6346 DataSheet
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Especificações
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Description
Key features of the IRLML6346 include its low on-resistance, which allows for efficient current flow with minimal power loss, and its capability to handle significant amounts of current and voltage, making it suitable for high-power applications. The MOSFET is usually housed in a small SOT-23 package, enabling compact designs and integration into space-constrained circuits.
The device is designed for use in logic-level applications, meaning it is compatible with the low voltage levels used in digital circuits, typically around 5 volts or less. This makes the IRLML6346 ideal for interfacing with microcontrollers and other digital logic devices. It is well-regarded for its reliability and efficiency, contributing to its popularity in both consumer electronics and industrial applications.
Equivalent
1. BS170 - N-channel MOSFET with similar specifications.
2. 2N7002 - Widely used N-channel MOSFET.
3. BSS138 - N-channel logic level MOSFET.
4. FDV301N - Suitable for low voltage applications.
5. MMBF170 - A similar SMD package MOSFET.
Always check the datasheets for exact parameter matching before substituting.
Features
1. Type: N-channel MOSFET.
2. Voltage Rating: It typically has a drain-source voltage (V_DS) rating of 30V.
3. Current Rating: The continuous drain current (I_D) can be around 5.3A when mounted on a suitable heatsink.
4. R_DS(on): It has a low on-resistance, typically around 22mΩ, which helps minimize power loss and improve efficiency.
5. Package Type: The MOSFET is usually available in a small SOT-23 package, making it suitable for compact circuit designs.
6. Gate Charge: Features a low gate charge, which contributes to fast switching speeds, important for high-frequency applications.
7. Applications: It is commonly used in applications such as power management, load switching, and DC-DC converters.
These features make the IRLML6346 suitable for various applications requiring efficient power handling and compact design.
Pinout
1. Gate (G): This pin is used to control the voltage applied to the MOSFET, which in turn controls the current flow between the drain and source.
2. Drain (D): The drain is where the current enters the MOSFET from the external circuit.
3. Source (S): The source is where the current exits the MOSFET to the external circuit.
The IRLML6346 is used for applications that require efficient switching and power handling capabilities, suitable for low-voltage applications.