IRLML6402TRPBF

Imagens apenas para referência

IRLML6402TRPBF

+Lista de Materiais

MOSFET P-CH 20V 3.7A SOT23

365 Garantia de Qualidade em 1 dia

7*24 Garantia de serviço em 24 horas

90-Garantia de pós-venda em 1 dia

Garantia de Produto Genuíno

Especificações

Atributo Valor
Series HEXFET®
Part Status Last Time Buy
Base Product Number IRLML6402
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 3.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 65mOhm @ 3.7A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 12 nC @ 5 V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 633 pF @ 10 V
Power Dissipation (Max) 1.3W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package Micro3™/SOT-23
Package TO-236-3, SC-59, SOT-23-3
Packaging Cut Tape (CT), Tape & Reel (TR)

Visão Geral

Equivalent

Equivalent products to the IRLML6402TRPBF (P-channel MOSFET, 20V, -3.7A, SOT-23) include:
- Si2301DS (Vishay)
- DMG2305UX (Diodes Inc.)
- FDC5612P (Fairchild/ON Semi)
- BSS84 (NXP/Infineon)
These are similar in specs (P-channel, SOT-23, comparable VDS/ID). Verify exact parameters (RDS(on), VGS) for your application.

Application

The IRLML6402TRPBF, a P-channel MOSFET, is commonly used in:
1. Power Management – Load switching, battery protection, and DC-DC converters.
2. Portable Electronics – Power control in smartphones, tablets, and wearables.
3. Automotive Systems – Low-voltage applications like infotainment and lighting.
4. Consumer Electronics – Efficient power switching in devices like laptops and gaming consoles.
5. Industrial Controls – Motor drives and low-power switching circuits.
Its small size (SOT-23 package), low on-resistance, and fast switching make it ideal for compact, energy-efficient designs.

Package

The IRLML6402TRPBF is a P-channel MOSFET available in a SOT-23-3 surface-mount package. This compact package is widely used for low-power applications, offering three leads and a small footprint. It is suitable for space-constrained designs, such as portable electronics and power management circuits. The SOT-23-3 package ensures easy assembly and efficient thermal performance.

Frequently Asked Questions


Q: What is the maximum drain current for the IRLML6402TRPBF at 25°C?
A: The maximum continuous drain current (Id) is 3.7A at 25°C, as per the manufacturer specifications for this P-Channel MOSFET.


Q: Can this MOSFET be driven by a 2.5V logic signal?
A: Yes, it supports a drive voltage of 2.5V (minimum Rds on condition), making it suitable for low-voltage logic-level gate drivers.


Q: What is the typical on-resistance at 4.5V gate drive?
A: The maximum Rds(on) is 65mOhm at Vgs of 4.5V and Id of 3.7A, ensuring efficient power switching.


Q: What is the maximum gate threshold voltage?
A: The maximum Vgs(th) is 1.2V at Id of 250μA, ensuring reliable turn-on with low-voltage control signals.


Q: What is the power dissipation limit for this device?
A: The maximum power dissipation is 1.3W at ambient temperature (Ta), suitable for low-power surface-mount designs.


Q: What is the input capacitance value at 10V drain-source voltage?
A: The maximum input capacitance (Ciss) is 633 pF at Vds of 10V, influencing switching speed and driver requirements.


Produtos relacionados a IRLML6402TRPBF

  • Orçamento Rápido

  • Envie sua solicitação de orçamento para IRLML6402TRPBF Use este formulário. Responderemos em até 12 horas.