Imagens apenas para referência
IRLMS1503TRPBF
+Lista de MateriaisMOSFET N-CH 30V 3.2A MICRO6
-
FabricanteTecnologias Infineon
-
Peça do Fabricante #IRLMS1503TRPBF
-
Em Estoque8551
365 Garantia de Qualidade em 1 dia
7*24 Garantia de serviço em 24 horas
90-Garantia de pós-venda em 1 dia
Garantia de Produto Genuíno
Especificações
| Atributo | Valor |
| Series | HEXFET® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain (Id) @ 25°C | 3.2A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 2.2A, 10V |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 9.6 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 210 pF @ 25 V |
| Power Dissipation (Max) | 1.7W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | Micro6™(TSOP-6) |
| Package / Case | SOT-23-6 |
| Base Product Number | IRLMS1503 |
Visão Geral
Description
Key specifications include a maximum drain-source voltage (VDS) of 30V and a continuous drain current (ID) rating of up to 50A, depending on thermal conditions. The IRLMS1503TRPBF also incorporates a built-in gate protection feature, which improves reliability in circuit designs.
Its compact SO-8 package facilitates easy integration into space-constrained environments, while its lead-free construction aligns with environmental regulations. Overall, the IRLMS1503TRPBF is a robust choice for engineers looking to improve the performance and efficiency of their power electronic systems.
Equivalent
Features
1. High Voltage Rating: Supports drain-source voltages up to 30V.
2. Low On-Resistance: Offers a maximum R_DS(on) of 9.5 mΩ at V_GS = 10V, ensuring efficient current conduction and reduced power loss.
3. Fast Switching Speed: Designed for rapid switching, which enhances overall system efficiency.
4. Logic Level Compatible: Operates effectively with low gate voltages, making it suitable for direct interfacing with microcontrollers.
5. Thermal Performance: Features a low thermal resistance, aiding in heat dissipation during operation.
6. Surface Mount Package: Available in a compact SOIC-8 package, facilitating easier PCB layout and integration.
These attributes make the IRLMS1503TRPBF suitable for applications in DC-DC converters, motor drivers, and other power management circuits.
Pinout
1. Gate (G) - The control terminal that receives the input signal to turn the MOSFET on or off.
2. Drain (D) - The terminal where the output current flows out. This is the main current-carrying terminal.
3. Source (S) - The terminal that is connected to ground or the negative supply in a typical application.
4. Body (substrate) - Internally connected to the source, it's often not externally connected in typical applications.
This MOSFET is designed for high-speed switching applications and is suitable for use in power management and motor control. Its low gate threshold voltage allows for efficient operation with low input power requirements.
Manufacturer
Founded in 1930 and headquartered in Dallas, Texas, Texas Instruments has a strong reputation for innovation and has been a key player in the development of semiconductor technology. They focus on providing solutions that enhance the performance of electronic systems while promoting energy efficiency and functionality. TI's product portfolio includes integrated circuits, microcontrollers, and other components essential for modern electronics.
Overall, Texas Instruments is recognized as a leader in the semiconductor industry, with a commitment to research and development, which enables them to offer cutting-edge technologies to their customers worldwide.