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IRLR3110ZTRPBF
+Lista de MateriaisIRLR3110 - 12V-300V N-CHANNEL PO
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FabricanteRectificador Internacional
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Peça do Fabricante #IRLR3110ZTRPBF
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Ficha Técnica IRLR3110ZTRPBF DataSheet
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Pacote TO-252-3
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Especificações
| Atributo | Valor |
| Package / Case | Bulk |
| Series | HEXFET® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain(Id) @ 25°C | 42A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 14mOhm @ 38A, 10V |
| Vgs(th)(Max) @ Id | 2.5V @ 100µA |
| Gate Charge(Qg)(Max) @ Vgs | 48 nC @ 4.5 V |
| Vgs(Max) | ±16V |
| Input Capacitance(Ciss)(Max) @ Vds | 3980 pF @ 25 V |
| Power Dissipation (Max) | 140W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | D-Pak |
Visão Geral
Description
- Low On-Resistance (RDS(on)): 1.8 mΩ (max) at VGS = 10V, reducing conduction losses.
- High Current Handling: Up to 100A continuous drain current (ID).
- Fast Switching: Optimized for high-frequency applications like DC-DC converters, motor drives, and power management.
- Logic-Level Gate Drive: Fully enhanced at 4.5V (VGS), simplifying control circuit design.
- Robust Packaging: D2PAK (TO-263) for efficient thermal performance.
Ideal for battery protection, synchronous rectification, and load switching in automotive, industrial, and consumer electronics. Its low gate charge (Qg) and avalanche-rated design enhance reliability in demanding environments.
For detailed specs, refer to the datasheet.
Equivalent
- IRLR3110ZPBF (Same specs, different packaging)
- IRL1004 (40V, 130A)
- IRL40B209 (40V, 120A)
- STP80NF55-06 (55V, 80A)
- AOT240L (40V, 75A)
Check datasheets for exact compatibility in your application.
Features
- Voltage Rating: 100V
- Current Rating: 64A (continuous)
- Low On-Resistance (RDS(on)): 7.5mΩ (max @ VGS=10V)
- Fast Switching: Optimized for high-efficiency applications
- Logic-Level Gate Drive: Fully enhanced at 4.5V (VGS)
- Avalanche Energy Rated: Robust against inductive spikes
- Package: TO-252 (DPAK) – Surface-mount, compact design
- Low Gate Charge (Qg): Enhances switching performance
- Applications: Power management, DC-DC converters, motor control
This MOSFET is ideal for high-current, high-efficiency designs requiring low conduction losses.
Pinout
1. Gate (G) – Controls the switching operation.
2. Drain (D) – Connects to the load (high current path).
3. Source (S) – Ground/reference terminal.
Key Features:
- VDS: 30V
- ID: 46A (continuous)
- Low RDS(on): 4.5mΩ (max at VGS=10V)
- Logic-Level Gate Drive (VGS ≥ 2.5V)
Commonly used in power switching, DC-DC converters, and motor control due to its high efficiency and compact form.
Application
- Power Supplies: DC-DC converters, SMPS.
- Motor Control: Brushed DC and stepper motor drivers.
- Load Switching: High-efficiency power switching in industrial/automotive systems.
- Battery Management: Protection circuits and discharge control.
- LED Drivers: High-current LED lighting applications.
Its low on-resistance (RDS(on)) and high current handling (up to 46A) make it ideal for high-efficiency, low-loss applications.
