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IS42S16320B-6TL
+Lista de MateriaisIC DRAM 512MBIT PAR 54TSOP II
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FabricanteISSI, Integrated Silicon Solution Inc.
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Peça do Fabricante #IS42S16320B-6TL
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Pacote TSOP-54
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Em Estoque5118
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Especificações
| Atributo | Valor |
| Package / Case | Bulk,Tray |
| Part Status | Obsolete |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM |
| Memory Size | 512Mb (32M x 16) |
| Memory Interface | Parallel |
| Clock Frequency | 166 MHz |
| Access Time | 5.4 ns |
| Voltage - Supply | 3V ~ 3.6V |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Mounting Type | Surface Mount |
Visão Geral
Description
The IS42S16320B-6TL is a 512K x 16-bit x 4 banks (32 Megabit) Synchronous Dynamic Random-Access Memory (SDRAM) chip designed by Integrated Silicon Solution, Inc. (ISSI). Operating with a 3.3V power supply, this SDRAM is optimized for high-speed and low-power applications, making it suitable for use in computing, telecommunications, and consumer electronics.
The device features a 4-bank architecture to facilitate high-speed data processing and is equipped with a synchronous interface, meaning that all operations are synchronized to a clock signal. This allows for fast and efficient data access and transfer. The "-6TL" in the part number indicates its speed grade, with a clock cycle time of 6 nanoseconds, translating to a maximum data transfer rate of 166 MHz.
Additional features include programmable modes for different burst lengths and latencies, self-refresh capabilities to conserve power, and a 2048-cycle refresh per 32 milliseconds to maintain data integrity. The IS42S16320B-6TL is packaged in a 54-pin TSOP II, making it compact and suitable for integration into a variety of systems.
The device features a 4-bank architecture to facilitate high-speed data processing and is equipped with a synchronous interface, meaning that all operations are synchronized to a clock signal. This allows for fast and efficient data access and transfer. The "-6TL" in the part number indicates its speed grade, with a clock cycle time of 6 nanoseconds, translating to a maximum data transfer rate of 166 MHz.
Additional features include programmable modes for different burst lengths and latencies, self-refresh capabilities to conserve power, and a 2048-cycle refresh per 32 milliseconds to maintain data integrity. The IS42S16320B-6TL is packaged in a 54-pin TSOP II, making it compact and suitable for integration into a variety of systems.
Equivalent
The IS42S16320B-6TL is a 512K x 16-bit x 4 banks Synchronous DRAM. Equivalent products might include:
1. Micron MT48LC16M16A2P-6A: Similar 256Mb SDRAM with equivalent speed.
2. Samsung K4S281632I-UC60: Another 256Mb SDRAM with similar specifications.
3. Hynix HY57V641620HGT-6: Offers comparable features and performance.
When selecting equivalents, ensure they match in voltage, speed, and package type for compatibility.
1. Micron MT48LC16M16A2P-6A: Similar 256Mb SDRAM with equivalent speed.
2. Samsung K4S281632I-UC60: Another 256Mb SDRAM with similar specifications.
3. Hynix HY57V641620HGT-6: Offers comparable features and performance.
When selecting equivalents, ensure they match in voltage, speed, and package type for compatibility.
Features
The IS42S16320B-6TL is a 512K x 16-bit synchronous dynamic RAM (SDRAM) with a clock frequency of up to 166 MHz. Key features include:
1. Organization: It has a 16M capacity organized as 4 banks of 2M x 16 bits.
2. Interface: Synchronous interface for all signals, with on-chip pipelined architecture.
3. Burst Lengths: Supports burst lengths of 1, 2, 4, 8, or full page.
4. CAS Latency: Configurable CAS latency of 2 or 3.
5. Auto-Refresh: Includes automatic refresh and self-refresh modes to maintain data integrity.
6. Operating Voltage: Operates at a 3.3V power supply.
7. Data Mask: Features data masking for byte control.
8. Packaging: Available in a 54-pin TSOP-II package for surface mounting.
Ideal for applications requiring high-speed data processing, such as computing systems and embedded devices, the IS42S16320B-6TL provides efficient memory solutions with its fast access times and flexible operational modes.
1. Organization: It has a 16M capacity organized as 4 banks of 2M x 16 bits.
2. Interface: Synchronous interface for all signals, with on-chip pipelined architecture.
3. Burst Lengths: Supports burst lengths of 1, 2, 4, 8, or full page.
4. CAS Latency: Configurable CAS latency of 2 or 3.
5. Auto-Refresh: Includes automatic refresh and self-refresh modes to maintain data integrity.
6. Operating Voltage: Operates at a 3.3V power supply.
7. Data Mask: Features data masking for byte control.
8. Packaging: Available in a 54-pin TSOP-II package for surface mounting.
Ideal for applications requiring high-speed data processing, such as computing systems and embedded devices, the IS42S16320B-6TL provides efficient memory solutions with its fast access times and flexible operational modes.
Pinout
The IS42S16320B-6TL is a 512Mb SDRAM (Synchronous Dynamic Random-Access Memory) from ISSI. It typically features a 54-pin TSOP II package. The pin functions include:
1. Data Pins (DQ0-DQ15): Used for data input/output, 16-bit wide.
2. Address Pins (A0-A12): Used to specify the memory address for read/write operations.
3. Bank Address Pins (BA0-BA1): Used to select one of the four internal memory banks.
4. Control Pins:
- /CAS (Column Address Strobe): Activates a column address.
- /RAS (Row Address Strobe): Activates a row address.
- /WE (Write Enable): Determines if the operation is a read or write.
- /CS (Chip Select): Enables or disables the SDRAM chip.
5. Clock Pin (CLK): Synchronizes the memory operations.
6. Clock Enable (CKE): Controls the clock signal to the SDRAM.
7. Data Mask (DQM0-DQM1): Masks data input/output operations.
8. Power Pins (VCC, VSS): Supply power and ground for the device.
These functions allow the IS42S16320B-6TL to efficiently manage data transfer in various electronic applications.
1. Data Pins (DQ0-DQ15): Used for data input/output, 16-bit wide.
2. Address Pins (A0-A12): Used to specify the memory address for read/write operations.
3. Bank Address Pins (BA0-BA1): Used to select one of the four internal memory banks.
4. Control Pins:
- /CAS (Column Address Strobe): Activates a column address.
- /RAS (Row Address Strobe): Activates a row address.
- /WE (Write Enable): Determines if the operation is a read or write.
- /CS (Chip Select): Enables or disables the SDRAM chip.
5. Clock Pin (CLK): Synchronizes the memory operations.
6. Clock Enable (CKE): Controls the clock signal to the SDRAM.
7. Data Mask (DQM0-DQM1): Masks data input/output operations.
8. Power Pins (VCC, VSS): Supply power and ground for the device.
These functions allow the IS42S16320B-6TL to efficiently manage data transfer in various electronic applications.
Manufacturer
The IS42S16320B-6TL is a product manufactured by ISSI, Integrated Silicon Solution, Inc. ISSI is a technology company that specializes in the design and manufacture of high-performance integrated circuits. They focus on providing high-speed and low-power memory and analog/mixed-signal integrated circuits for a variety of applications, including automotive, communications, industrial, and digital consumer markets. The company is known for delivering products that offer high quality and reliability, which are essential in the demanding environments of their target markets.
Application
The IS42S16320B-6TL is a synchronous DRAM (SDRAM) used in various applications requiring temporary data storage and quick data retrieval. Key application areas include consumer electronics such as TVs and digital cameras, networking equipment like routers and switches, and computing devices such as printers and scanners. It's also suitable for embedded systems in automotive electronics and industrial control systems, where reliable and fast memory access is crucial. Its compatibility with standard SDRAM interfaces makes it a versatile choice for systems needing efficient data processing and memory management.
Package
The IS42S16320B-6TL is a DRAM chip packaged in a 54-pin TSOP II (Thin Small Outline Package type II). This package type is commonly used for memory devices, providing a compact and efficient form factor suitable for various electronic applications.
