IS42S16400F-7TLI

The IS42S16400F-7TLI is a 64Mbit (4M x 16) SDRAM (Synchronous Dynamic Random-Access Memory) module, designed by ISSI (Integrated Silicon Solution, Inc.). It is organized as 4 banks of 1M word x 16 bits and operates with a power supply voltage range of 3.0V to 3.6V. The "-7TLI" designation indicates a speed grade of 7 nanoseconds with low power and industrial temperature range.
This SDRAM is well-suited for applications requiring high-speed data processing and storage, such as in consumer electronics, networking devices, automotive systems, and industrial equipment. It features a fully synchronous interface, allowing for easy integration into systems that require fast data access and high bandwidth. The memory supports burst lengths of 1, 2, 4, 8, or full-page, and includes a precharge option, auto-refresh, and self-refresh capabilities for efficient power management.
Overall, the IS42S16400F-7TLI offers reliable performance and flexibility to meet the demands of various high-performance computing environments.

The IS42S16400F-7TLI is a 64Mb SDRAM chip. Equivalent products would include similar 64Mb SDRAMs from other manufacturers. Possible alternatives are the Micron MT48LC4M16A2, the Samsung K4S641632H, and the Hynix HY57V641620H. Ensure compatibility by checking the specifications like voltage, speed, and package type when selecting an equivalent.

The IS42S16400F-7TLI is a 64 Megabit DRAM organized as 4M x 16. It is a part of the SDRAM (Synchronous Dynamic Random-Access Memory) category. The device is housed in a 50-pin TSOP (Type II) package. The pin functions include:
1. Data pins (DQ0-DQ15): 16 data input/output pins.
2. Address pins (A0-A11): Used for row and column addressing.
3. Bank Address pins (BA0-BA1): Select one of four internal memory banks.
4. Control pins:
- /CAS (Column Address Strobe): Activates column address and defines start of data read/write.
- /RAS (Row Address Strobe): Activates row address and starts memory operation.
- /WE (Write Enable): Determines if the operation is read or write.
- /CS (Chip Select): Enables the DRAM chip.
5. Clock and Clock Enable pins (CLK, CKE): Synchronize operations with the system clock.
6. Other pins:
- /DQM (Data Mask): Controls input/output on the data pins, used for masking.
- VDD, VSS: Power supply and ground pins.
This configuration supports typical DRAM operations, including burst access, which enhances speed and efficiency.

The IS42S16400F-7TLI is manufactured by Integrated Silicon Solution Inc. (ISSI). ISSI is a technology company that specializes in the design and manufacture of high-performance integrated circuits. The company's product portfolio primarily includes memory products such as DRAM, SRAM, and Flash memory, along with analog and mixed-signal integrated circuits. ISSI serves various markets, including automotive, communications, industrial, and medical applications, emphasizing reliability and long-term support for their products.

The IS42S16400F-7TLI is a 64M SDRAM commonly used in applications requiring fast data processing and storage. Typical areas include:
1. Consumer Electronics: Used in devices like digital cameras and TVs for efficient image and video processing.
2. Networking: Employed in routers and switches for handling data packets quickly.
3. Industrial Systems: Utilized in embedded systems for real-time data processing.
4. Automotive Electronics: Integrated into infotainment systems and advanced driver-assistance systems (ADAS).
5. Computing Devices: Supports PCs, tablets, and other computing devices to enhance memory performance.
These applications leverage its high-speed data access and reliable performance.

The IS42S16400F-7TLI is a DRAM chip from ISSI, featuring a 400 Mb capacity. Its package type is a 50-pin TSOP II (Thin Small Outline Package), which is a common layout for DRAM components.