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IS42S16400J-6BL
+Lista de MateriaisIC DRAM 64MBIT PARALLEL 54TFBGA
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FabricanteISSI, Integrated Silicon Solution Inc.
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Peça do Fabricante #IS42S16400J-6BL
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Pacote TFBGA-54
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Especificações
| Atributo | Valor |
| Supplier | ISSI, Integrated Silicon Solution Inc |
| Package / Case | Tray |
| Part Status | Active |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM |
| Memory Size | 64Mb (4M x 16) |
| Memory Interface | Parallel |
| Clock Frequency | 166 MHz |
| Access Time | 5.4 ns |
| Voltage - Supply | 3V ~ 3.6V |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Mounting Type | Surface Mount |
Visão Geral
Description
Key points:
- Speed grade: -6 (about 6 ns access time).
- Architecture: asynchronous SRAM with a 4‑bit data bus (DQ0–DQ3).
- Addressing: A0–A14 select one of 16,384 words.
- Control signals: Chip Enable (CE), Output Enable (OE), and Write Enable (WE). I/O is tri‑stated when not selected.
- Power: typically a single 5V supply (check datasheet for exact voltage and temp range; variants exist for commercial/industrial ranges).
- Packaging: available in Pb‑free “BL” variants in common 32‑pin packages.
Applications:
- Caches, buffers, frame buffers, and other fast random‑access memory needs in embedded systems.
Note:
- Always consult the datasheet for exact electrical specs (Vcc range, I/O levels, leakage, temperature range) and pinout for the specific package you’re using.
Equivalent
Features
- Asynchronous operation (no clock) with CE, OE, WE controls
- 6 ns access time
- Single-supply operation (typical 3.3V, with a practical 2.7–3.6V range for many variants)
- 8-bit data bus with tri-state outputs
- Fully static memory (no refresh required)
- Low standby power
- Industrial temperature range (J variant) for reliability in harsh environments
- Pb-free package options (typical 28-pin, various package types)
Applications: caches, buffers, frame buffers, and general memory expansion. For exact voltage, temperature, and package specifications, consult the datasheet.
Pinout
Function: 64 Mbit synchronous DRAM (SDRAM) device, organized as 16M x 4 (4-bit I/O). It uses standard SDRAM signals: address/bank address, CS, RAS, CAS, WE, clock, and 4 data I/O lines (DQ0–DQ3). The -6BL indicates a 6 ns speed grade with Pb-free/lead-free packaging.
Manufacturer
- Company type: A US-based fabless semiconductor company that designs and markets memory integrated circuits (DRAM, SRAM, etc.), outsourcing fabrication to foundries.
Application
- On-board buffers and scratchpad RAM in microcontrollers, DSPs, and ASIC/FPGA designs
- Cache, register files, and look-up/tables for embedded systems
- Small frame buffers or graphics buffers in embedded video/GUI
- High-speed data buffering for interfaces (UART, SPI, I2C, networking) and simple FIFOs
- General-purpose RAM in consumer electronics, automotive, and industrial equipment requiring fast, small SRAM.