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IS42S32160C-75BLI
+Lista de MateriaisIC DRAM 512MBIT PARALLEL 90WBGA
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FabricanteISSI, Integrated Silicon Solution Inc.
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Peça do Fabricante #IS42S32160C-75BLI
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Ficha Técnica IS42S32160C-75BLI DataSheet
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Pacote LFBGA-90
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Especificações
| Atributo | Valor |
| Supplier | ISSI, Integrated Silicon Solution Inc |
| Package / Case | Tray |
| Part Status | Obsolete |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM |
| Memory Size | 512Mb (16M x 32) |
| Memory Interface | Parallel |
| Clock Frequency | 133 MHz |
| Access Time | 6 ns |
| Voltage - Supply | 3V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
Visão Geral
Description
Key points:
- Organization: 32M words × 16 bits
- Speed: 75 ns (speed grade)
- Interface: multiplexed address/data SDRAM with standard signals (A[10:0], BA[1:0], CS#, RAS#, CAS#, WE#, CK/CK#, DQ[15:0])
- Voltage: typically 3.3V (check datasheet for exact operating range)
- Package: BLI (ball-leadless) package
- Features: synchronous operation, auto-refresh, burst/pipelined access, multiple banks per device
- Applications: embedded systems, graphics buffers, memory for consumer/industrial electronics
Note: Exact electrical specs, pinout, timing, and mechanical dimensions vary by revision and package. Refer to the official ISSI IS42S32160C-75BLI datasheet for complete details.
Features
- 512 Mb total capacity: 32M × 16 organization (32M x 16-bit)
- 3.3 V supply
- Synchronous DRAM with multi-bank architecture (4 banks)
- Burst data capability: typical BL options (2/4/8)
- CAS latency options around 2 and 3 (depends on mode)
- Auto-refresh and self-refresh support
- Page-mode operation with interleaved bursts
- 75 ns speed grade
- Pb-free package (BLI)
Note: for exact timing specs and electrical details, please refer to the official datasheet.
Pinout
- Function: IS42S32160C-75BLI is a 32M × 16-bit dynamic RAM (DRAM) device. It uses multiplexed row/column addresses with bank select (BA0/BA1) and a 16-bit data bus (DQ0–DQ15), controlled by standard DRAM signals (CS, RAS, CAS, WE).
Manufacturer
Company type: A US-based fabless semiconductor company that designs and markets memory ICs (DRAM and SRAM).
Application
- Main memory for desktops, laptops, and embedded systems
- Graphics/frame-buffer and video memory for displays and GPUs
- High-speed memory buffers/caches in network/telecom equipment (switches, routers, base stations)
- Embedded consumer electronics (set-top boxes, DVD/BD players, TVs, DVRs)
- Industrial and automotive electronics requiring reliable SDRAM in controllers and monitoring systems