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IS42S32160F-6BLI
+Lista de MateriaisIC DRAM 512MBIT PARALLEL 90TFBGA
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FabricanteISSI, Integrated Silicon Solution Inc.
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Peça do Fabricante #IS42S32160F-6BLI
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Ficha Técnica IS42S32160F-6BLI DataSheet
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Pacote TFBGA-90
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Especificações
| Atributo | Valor |
| Package / Case | Tray |
| Part Status | Active |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM |
| Memory Size | 512Mb (16M x 32) |
| Memory Interface | Parallel |
| Clock Frequency | 167 MHz |
| Access Time | 5.4 ns |
| Voltage - Supply | 3V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
Visão Geral
Description
This SDRAM supports a clock frequency of up to 166 MHz (6 ns cycle time) and features a single 3.3V power supply. It is equipped with programmable read and write burst lengths, along with a burst termination and latency function, enhancing its operational flexibility. The device also incorporates a self-refresh mode for power conservation and an all-bank auto-refresh feature to maintain data integrity.
The IS42S32160F-6BLI is packaged in a 54-pin TSOP-II, offering a compact footprint and ease of integration into various circuit designs. It is suitable for applications requiring reliable, high-speed memory solutions. Additionally, its industrial temperature range ensures stable performance across diverse environmental conditions.
Equivalent
1. Micron MT48LC32M16A2 - 64Mb SDRAM
2. Samsung K4S561632J - 64Mb SDRAM
3. Hynix HY57V641620 - 64Mb SDRAM
4. Nanya NT5SV32M16 - 64Mb SDRAM
These alternatives share similar specifications such as density, organization, and speed, making them suitable replacements. Always verify pin compatibility and timing requirements before substitution.
Features
1. Speed: It operates with a clock frequency of up to 166 MHz, providing efficient data handling and quick access times.
2. Power Supply: Utilizes a 3.3V power supply, typical for compatibility with a wide range of applications.
3. Interface: Features a synchronous interface that facilitates precise control and data transfer in high-speed applications.
4. Burst Length: Supports burst lengths of 1, 2, 4, 8, and full page, allowing for flexible data access patterns.
5. Latency: Offers CAS latency options of 2 and 3 cycles, providing versatility dependent on performance and power requirements.
6. Packaging: Comes in a 54-pin TSOP-II package, suitable for compact and space-constrained designs.
7. Temperature Range: The IS42S32160F-6BLI can operate in an industrial temperature range, making it suitable for challenging environments.
This SDRAM is widely used in applications requiring fast memory performance, such as consumer electronics, industrial controls, and networking systems.
Pinout
The pin count for the IS42S32160F-6BLI is 90 pins. These pins are used for various functions, including:
- Address Lines (A0-A11): Used to select the row and column addresses.
- Bank Address Lines (BA0, BA1): Used to select one of the four banks.
- Data Lines (DQ0-DQ31): 32-bit data bus for data input/output.
- Data Mask Lines (DQM0-DQM3): Used for input/output masking.
- Clock Line (CLK): Synchronizes operations.
- Clock Enable Line (CKE): Activates or deactivates the clock.
- Chip Select Line (CS): Activates or deactivates the chip.
- RAS, CAS, WE Lines: Used for controlling row, column, and write operations.
This SDRAM is typically used in applications requiring high-speed and efficient memory such as computing, telecommunications, and consumer electronics.