IS42S32400F-6BLI

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IS42S32400F-6BLI

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IC DRAM 128MBIT PAR 90TFBGA

  • FabricanteISSI, Integrated Silicon Solution Inc.

  • Peça do Fabricante #IS42S32400F-6BLI

  • Em Estoque2232

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Especificações

Atributo Valor
Part Status Obsolete
Digi Key Programmable Not Verified
Memory Type Volatile
Memory Format DRAM
Technology SDRAM
Memory Size 128Mbit
Memory Organization 4M x 32
Memory Interface Parallel
Voltage - Supply 3V ~ 3.6V
Operating Temperature -40°C ~ 85°C (TA)
Mounting Type Surface Mount
Package / Case 90-TFBGA
Supplier Device Package 90-TFBGA (8x13)
Base Product Number IS42S32400
Clock Frequency 166 MHz
Access Time 5.4 ns

Visão Geral

Description

The IS42S32400F-6BLI is a 128 Megabit DRAM (Dynamic Random Access Memory) component, commonly utilized in digital circuits requiring high-speed and efficient memory solutions. This device is organized as 4 Meg x 32 bits x 4 banks, offering a total storage capacity of 32 Megabytes. Operating at a maximum frequency of 166 MHz, it features a CAS (Column Address Strobe) latency of 2 or 3, suitable for a variety of applications requiring reliable and rapid data access.
The IS42S32400F-6BLI operates at a standard voltage of 3.3V and supports burst read and write operations, enhancing its utility in systems demanding quick data retrieval and processing. Its low power design and power-down modes make it an efficient choice for portable and battery-operated devices. The device's industrial temperature range further extends its applicability in diverse environments. Packaged in a 90-ball FBGA (Fine-Pitch Ball Grid Array), the IS42S32400F-6BLI ensures ease of integration into compact electronic designs. It is ideal for use in applications such as networking equipment, consumer electronics, and embedded systems.

Equivalent

The IS42S32400F-6BLI is a 128MB SDRAM chip. Equivalent products would include other 128MB SDRAM chips with similar specifications, such as:
1. Micron MT48LC32M8A2-6A
2. Samsung K4S560832J-UC75
3. Hynix HY57V283220T-6
4. Nanya NT5SV32M8CS-6K
When replacing, ensure compatibility in terms of voltage, speed, and package type to match your specific requirements.

Features

The IS42S32400F-6BLI is a 128MB SDRAM (Synchronous Dynamic Random-Access Memory) module designed for high-speed performance and efficient data handling. Key features include:
1. Capacity and Organization: 128 Megabits, organized as 4M x 32 bits.
2. Speed: Operates at a clock frequency of up to 166 MHz, supporting fast data transfer rates.
3. Voltage: Functions at a power supply voltage range of 3.0V to 3.6V.
4. Access Time: Provides a CAS latency of 2 or 3, enabling quick data access.
5. Interface: Features a synchronous interface, allowing for synchronized operations with the system clock.
6. Burst Length: Supports burst lengths of 1, 2, 4, 8, and full page, allowing flexible data access patterns.
7. Packaging: Available in a 86-ball FBGA (Fine-Pitch Ball Grid Array) package, which saves space and enhances thermal performance.
8. Operating Temperature: Designed to operate in a temperature range of -40°C to +85°C, suitable for industrial applications.
These features make the IS42S32400F-6BLI suitable for applications requiring high-speed memory, such as computers, networking devices, and embedded systems.

Pinout

The IS42S32400F-6BLI is a 128Mb SDRAM organized as 8 Meg x 4 x 4 banks. It comes in a 90-ball BGA (Ball Grid Array) package. The key functions and pin count details include:
- Pin Count: 90-ball BGA.
- Function: It is a synchronous DRAM, meaning operations are synchronized with a clock signal. It features four internal banks for concurrent operation.
- Key Pins:
- Address Pins (A0-A11): Used to select the row or column addresses.
- Data Pins (DQ0-DQ31): 32 data input/output pins.
- Bank Address Pins (BA0, BA1): Select the bank to be activated.
- Control Pins:
- Clock (CLK): Synchronizes the operations.
- Chip Select (CS#): Enables or disables the chip.
- Row Address Strobe (RAS#), Column Address Strobe (CAS#), and Write Enable (WE#): Control commands.
- Power Pins (VDD, VSS): Supply power to the chip.
This SDRAM is typically used in applications requiring high-speed data transfer and efficient memory management.

Manufacturer

The IS42S32400F-6BLI is manufactured by Integrated Silicon Solution Inc. (ISSI). ISSI is a technology company that specializes in the design and manufacturing of high-performance integrated circuits (ICs). The company focuses on products like DRAM, SRAM, and flash memory, as well as analog and mixed-signal ICs. These components are used in a wide range of applications, including automotive, communications, industrial, and digital consumer markets.
ISSI is known for providing memory solutions that are reliable and long-lasting, making them a preferred choice for industries that require stability and longevity in their electronic components. The company operates globally, serving a diverse set of customers and markets.

Application

The IS42S32400F-6BLI is a 128Mb (4M x 32) SDRAM memory chip that is commonly used in various electronic applications. Its primary application areas include consumer electronics, such as televisions and set-top boxes, where it helps manage video and audio data efficiently. Additionally, it is used in networking equipment, like routers and switches, for buffering and data storage purposes. The chip is also found in industrial automation systems, providing reliable memory support for controlling processes. Furthermore, it can be used in automotive electronics for infotainment systems and other control units, and in medical devices for data handling and processing tasks. Its versatility and performance make it suitable for a wide range of embedded systems.

Package

The IS42S32400F-6BLI is a 128MB SDRAM chip with a 90-ball BGA (Ball Grid Array) package type. The BGA package is designed to efficiently support high-speed data transfer and is commonly used in applications requiring compact and reliable memory solutions.

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