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IS42S32800D-6BLI
+Lista de MateriaisIC DRAM 256MBIT PAR 90TFBGA
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FabricanteISSI, Integrated Silicon Solution Inc.
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Peça do Fabricante #IS42S32800D-6BLI
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Ficha Técnica IS42S32800D-6BLI DataSheet
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Especificações
| Atributo | Valor |
| Part Status | Obsolete |
| Digi Key Programmable | Not Verified |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM |
| Memory Size | 256Mbit |
| Memory Organization | 8M x 32 |
| Memory Interface | Parallel |
| Voltage - Supply | 3V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 90-TFBGA |
| Supplier Device Package | 90-TFBGA (8x13) |
| Base Product Number | IS42S32800 |
| Clock Frequency | 166 MHz |
| Access Time | 5.4 ns |
Visão Geral
Description
Key specifications include a supply voltage of 1.5V, low power consumption, and a flexible memory architecture designed for easy integration into systems. The IS42S32800D-6BLI also supports a variety of operating modes for enhanced performance and efficiency. Its compact design and high-speed capability make it an attractive choice for developers looking to optimize memory performance in their products.
Equivalent
Features
1. Density: 256 Megabits organized as 32 Meg x 8 bits.
2. Speed: Operates at a clock frequency of 166 MHz with an access time of 6 ns.
3. Interface: Supports a 16-bit wide data bus, allowing for efficient data transfer.
4. Power Supply: Operates on a voltage of 2.5V for core and 3.0V for I/O, promoting low power consumption.
5. Package Type: Available in a 54-pin TSOP II package, facilitating easy integration into various applications.
6. Applications: Commonly used in consumer electronics, automotive, and networking devices that require high-speed memory performance.
This chip is ideal for applications that demand reliable data processing and storage capabilities.
Pinout
Key pin functions include:
- Address Pins (A0 - A14): Used for addressing the memory locations.
- Data Pins (DQ0 - DQ7): 8 data input/output pins for data transfer.
- Control Pins: Includes CS (Chip Select), RAS (Row Address Strobe), CAS (Column Address Strobe), and WE (Write Enable) for controlling read/write operations.
- VDD: Power supply pin.
- VSS: Ground pin.
- DQML / DQMH: Data Mask pins for byte control.
This DRAM is commonly used in various applications requiring reliable and efficient memory storage.
Manufacturer
Founded in 1988 and headquartered in San Jose, California, ISSI serves various markets, including telecommunications, automotive, consumer electronics, and industrial applications. The IS42S32800D-6BLI is a DDR2 DRAM memory chip designed for use in a range of electronic devices, providing efficient data storage and retrieval capabilities.
As a technology company, ISSI focuses on innovation and quality, catering to the growing demand for efficient memory solutions in an increasingly digital world.