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IS42S32800D-6TLI
+Lista de MateriaisIC DRAM 256MBIT PAR 86TSOP II
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FabricanteISSI, Integrated Silicon Solution Inc.
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Peça do Fabricante #IS42S32800D-6TLI
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Pacote TFSOP-86
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Em Estoque5879
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Especificações
| Atributo | Valor |
| Package / Case | Tray |
| Part Status | Obsolete |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM |
| Memory Size | 256Mb (8M x 32) |
| Memory Interface | Parallel |
| Clock Frequency | 166 MHz |
| Access Time | 5.4 ns |
| Voltage - Supply | 3V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
Visão Geral
Description
Key features of the IS42S32800D-6TLI include a dual in-line memory module (DIMM) form factor, low power consumption, and compatibility with typical 3.3V power supplies. It supports burst lengths of 2, 4, and 8, as well as a burst termination option. The module is equipped with multiple bank architecture and auto-refresh for self-maintenance, improving performance and reliability. It is widely used in consumer electronics, automotive systems, and industrial applications, where both high speed and reliability are essential.
Equivalent
Features
1. Capacity: 256 Megabits, organized as 8M x 32 bits.
2. Speed: Operates at a clock frequency of 166 MHz with a data rate of 166 MT/s.
3. Voltage: Operates at a standard power supply voltage of 3.3V.
4. Package: Available in a 90-ball TFBGA package.
5. Burst Lengths: Supports burst lengths of 1, 2, 4, 8, and a full-page.
6. CAS Latency: Configurable with CAS latency options of 2 or 3.
7. Refresh Modes: Supports auto-refresh and self-refresh modes.
8. Operating Temperature: Industrial temperature range from -40°C to 85°C.
9. Interface: Offers a 32-bit data interface.
10. Row and Column Organization: 4K refresh cycles with a row count of 4,096 and column count of 256.
This makes the IS42S32800D-6TLI suitable for applications requiring high speed and reliable memory performance in industrial environments.
Pinout
Pin Count:
- It has a total of 90 pins (balls).
Key Functions and Pin Descriptions:
- Data Inputs/Outputs (DQ0-DQ31): Bidirectional data bus.
- Address Inputs (A0-A12): Used to select the row and column address.
- Bank Selects (BA0-BA1): Select one of the four internal banks.
- Clock (CLK): Synchronizes the SDRAM operations.
- Clock Enable (CKE): Activates or deactivates the clock signal.
- Chip Select (CS#): Activates the chip.
- Row Address Strobe (RAS#): Initiates row operations.
- Column Address Strobe (CAS#): Initiates column operations.
- Write Enable (WE#): Controls write operations.
- Data Mask (DQM0-DQM3): Masks the data inputs/outputs.
This SDRAM is suitable for a variety of applications, including networking, telecommunications, and other consumer electronics that require high-speed data access and processing.