IS42S32800J-7BLI

Imagens apenas para referência

IS42S32800J-7BLI

+Lista de Materiais

IC DRAM 256MBIT PARALLEL 90TFBGA

  • FabricanteISSI, Integrated Silicon Solution Inc.

  • Peça do Fabricante #IS42S32800J-7BLI

  • Pacote TFBGA-90

  • Em Estoque3905

365 Garantia de Qualidade em 1 dia

7*24 Garantia de serviço em 24 horas

90-Garantia de pós-venda em 1 dia

Garantia de Produto Genuíno

Especificações

Atributo Valor
Supplier ISSI, Integrated Silicon Solution Inc
Package / Case Tray
Part Status Active
Memory Type Volatile
Memory Format DRAM
Technology SDRAM
Memory Size 256Mb (8M x 32)
Memory Interface Parallel
Clock Frequency 143 MHz
Access Time 5.4 ns
Voltage - Supply 3V ~ 3.6V
Operating Temperature -40°C ~ 85°C (TA)
Mounting Type Surface Mount

Visão Geral

Description

IS42S32800J-7BLI is a 32‑Mbit memory device from ISSI (Integrated Silicon Solution, Inc.). It is typically organized as 4M × 8, designed for high‑speed data buffering and caching in embedded systems. It operates from a single supply (commonly 3.3V) and uses a clocked, synchronous interface for reads and writes. The “-7” speed grade generally indicates around 70 ns typical access time, with timing governed by CLK, CE, WE, and OE signals. The “BLI” suffix usually denotes Pb‑free packaging with an industrial temperature range (e.g., −40°C to 85°C), though exact package and environmental specs vary by revision. Features often include synchronous burst or latched operations, tri‑state outputs, and standard memory‑controller compatibility. Applications include caches, frame buffers, DSP data paths, and other memory expansion needs in consumer, automotive, or industrial electronics. For precise electrical characteristics, timing diagrams, pinout, and packaging, consult the latest ISSI datasheet for IS42S32800J-7BLI. If you can share your target voltage, speed, and temperature range, I can tailor the overview further.

Features

IS42S32800J-7BLI features (typical):
- 32-Mbit SRAM (4M × 8 organization)
- Synchronous interface with clocked reads/writes
- 7 ns access time
- Single-supply operation at 3.3V
- Industrial operating range: −40°C to 85°C
- Leadless BGA package (BLI), RoHS-compliant
- Low-power operation with standby mode
- Suitable for high-speed cache/buffer memory and other fast SRAM needs.

Pinout

- Pin count: 54 pins (TSOP II package)
- Function: 32M × 8-bit Synchronous DRAM (SDRAM) with multiplexed address lines; includes standard SDRAM control signals (RAS, CAS, WE, CS, CLK) and I/O data pins DQ0–DQ7 plus DQM.

Manufacturer

Manufacturer: Integrated Silicon Solution, Inc. (ISSI).
Company type: ISSI is a fabless semiconductor company that designs and markets memory ICs (e.g., SRAM, DRAM, EEPROM) and outsources manufacturing to foundries.

Application

IS42S32800J-7BLI is a high-density DRAM used as system memory. Typical application areas:
- Main memory for desktop/notebook PCs and embedded processors
- Mobile/portable devices needing high-density RAM
- Consumer electronics: TVs, set-top boxes, digital cameras
- Networking/telecommunications equipment: routers, switches
- Industrial and automotive electronics: control systems, instrument clusters, displays
Short and generic memory-usage domains to cover most potential applications.

Package

Ball Grid Array (BGA) package, Pb-free.

Produtos relacionados a IS42S32800J-7BLI