IS43DR16320E-25DBLI

The IS43DR16320E-25DBLI is a high-performance, low-power Double Data Rate 3 Synchronous Dynamic Random-Access Memory (DDR3 SDRAM) chip. Manufactured by ISSI (Integrated Silicon Solution Inc.), this memory device is designed for applications demanding efficient data processing and quick access times. It features a 16 Meg x 16-bit configuration, totaling 256 Megabits of storage capacity.
The "-25DBLI" in its part number denotes specific characteristics: the "25" indicates a clock speed of 400 MHz, corresponding to a data rate of 800 MT/s (megatransfers per second). The "DB" likely refers to a specific package type or revision, while "LI" indicates it is designed for industrial temperature ranges, typically -40°C to 85°C, suitable for demanding environments.
The IS43DR16320E-25DBLI supports a range of features, including low power consumption, burst lengths of 4 or 8, and CAS latency of 5, 6, or 7. It is ideal for use in applications like telecommunications, networking equipment, and various industrial devices where reliable high-speed memory access is crucial.

The IS43DR16320E-25DBLI is a DDR3 SDRAM chip. Equivalent products include the Micron MT41K256M16, Samsung K4B2G1646Q, and Hynix H5TQ2G63GFR. These components share similar specifications in terms of memory size, speed, and configuration suitable for applications requiring DDR3 memory. Always verify compatibility with specific requirements and datasheets.

The IS43DR16320E-25DBLI is a DDR2 SDRAM memory chip designed by ISSI (Integrated Silicon Solution Inc.). Key features include:
1. Density and Configuration: It offers a 512Mb density, organized as 32M x 16 bits.
2. Speed: Operates at a clock speed of 400 MHz, providing a data rate of 800 MT/s (Megatransfers per second).
3. Voltage: Functions at a power supply voltage of 1.8V, supporting efficient power consumption.
4. Package: Available in a 84-ball FBGA (Fine-Pitch Ball Grid Array) package, which is suitable for space-constrained applications.
5. Temperature Range: Capable of operating within an industrial temperature range of -40°C to +85°C, making it versatile for various environments.
6. Burst Length: Supports burst lengths of 4 and 8, aiding in flexibility for different application needs.
7. CAS Latency: Offers CAS (Column Address Strobe) latencies from 3 to 7 cycles.
8. Applications: Ideal for use in automotive, industrial, and consumer electronics requiring reliable memory performance.
These features make the IS43DR16320E-25DBLI a robust choice for applications requiring high-speed, reliable memory performance under varying environmental conditions.

The IS43DR16320E-25DBLI is manufactured by ISSI, Integrated Silicon Solution, Inc. ISSI is a technology company that specializes in the design and manufacture of high-performance integrated circuits for various applications. The company focuses on providing high-quality and reliable semiconductor solutions, including DRAM, SRAM, Flash memory, and analog power management ICs. These products are used in a wide range of markets such as automotive, communications, industrial, and digital consumer applications. ISSI is known for its emphasis on long-term product support and a strong commitment to customer service.

The IS43DR16320E-25DBLI is a DRAM memory chip used in various applications requiring high-speed data processing and storage capabilities. Common application areas include consumer electronics such as smartphones and tablets, computing devices including laptops and desktops, networking equipment like routers and switches, and automotive electronics for infotainment systems. It is also utilized in industrial systems that demand reliable and efficient memory solutions. Its low power consumption and fast data access make it suitable for applications in mobile and battery-powered devices, enhancing performance while optimizing energy efficiency.

The IS43DR16320E-25DBLI is a DRAM chip from Integrated Silicon Solution Inc. (ISSI) and comes in a 96-ball BGA (Ball Grid Array) package type.