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IS43TR16256BL-125KBL
+Lista de MateriaisIC DRAM 4GBIT PARALLEL 96TWBGA
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FabricanteISSI, Integrated Silicon Solution Inc.
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Peça do Fabricante #IS43TR16256BL-125KBL
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Em Estoque9005
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Especificações
| Atributo | Valor |
| Part Status | Active |
| Digi Key Programmable | Not Verified |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - DDR3L |
| Memory Size | 4Gbit |
| Memory Organization | 256M x 16 |
| Memory Interface | Parallel |
| Clock Frequency | 800 MHz |
| Write Cycle Time - Word, Page | 15ns |
| Access Time | 20 ns |
| Voltage - Supply | 1.283V ~ 1.45V |
| Operating Temperature | 0°C ~ 95°C (TC) |
| Mounting Type | Surface Mount |
| Package / Case | 96-TFBGA |
| Supplier Device Package | 96-TWBGA (9x13) |
| Base Product Number | IS43TR16256 |
Visão Geral
Description
The "125K" in the part number indicates its access time of 125 nanoseconds, making it suitable for applications requiring fast data retrieval. It employs a synchronous interface, enabling high-speed data transfer, and uses an 8-byte burst mode to improve throughput.
The chip is commonly utilized in mobile devices, consumer electronics, and automotive applications, where both performance and energy efficiency are paramount. Its compact size and reliability make it a popular choice for manufacturers looking to optimize their products.
Equivalent
1. MT47H64M16HR-25E (Micron)
2. K4T1G164EB-HCC7 (Samsung)
3. Hynix HYMD5D1282G6K (Hynix)
4. Nanya NT5CB256M16DP (Nanya)
5. ESMT M12L2561616A (ESMT)
Ensure compatibility with your specific application, as variations may exist in timing and voltage specifications.
Features
1. Architecture: It utilizes a synchronous DRAM architecture, allowing for high-speed data access.
2. Speed: Operates at a speed of 125 MHz, providing efficient performance for various applications.
3. Package: Typically available in a standard TSOP-II (Thin Small Outline Package) form factor, facilitating easy integration into PCBs.
4. Voltage: Operates on a supply voltage of 2.5V, optimizing power consumption.
5. Data Transfer Rate: Supports a burst length of 2, 4, or 8, enabling flexible data transfer rates.
6. Timing: Features low latency with optimized timing parameters for improved performance in memory-intensive tasks.
7. Compatibility: Suitable for use in various applications, including telecommunications, computers, and consumer electronics.
This memory chip delivers a balance of performance and efficiency, making it ideal for modern computing needs.
Pinout
Key Pin Functions:
- Data Pins (DQ0-DQ15): 16 data input/output pins for data transfer.
- Address Pins (A0-A11): 12 address pins for selecting memory locations.
- Control Pins:
- CLK: Clock input for synchronization.
- CKE: Clock enable, controls the operation of the device.
- CS: Chip select, activates the device.
- RAS, CAS, WE: Row address strobe, column address strobe, and write enable for memory operations.
- Power Supply Pins: VDD and VSS for power supply and ground connections.
This chip is designed for high-speed memory applications, supporting a data rate of up to 125 MHz.
Manufacturer
The IS43TR16256BL-125KBL specifically is a DDR3 SDRAM (Double Data Rate Synchronous Dynamic Random Access Memory) chip, commonly used in various applications such as consumer electronics, telecommunications, and computing systems. ISSI is known for its commitment to quality and innovation in the semiconductor industry, providing memory solutions that cater to the needs of various markets, including automotive, industrial, and mobile applications.
Overall, ISSI plays a significant role in the electronics sector by providing reliable and efficient memory products to enhance the performance of modern electronic devices.