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IC DRAM 2GBIT PARALLEL 78TWBGA
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FabricanteISSI, Integrated Silicon Solution Inc.
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Peça do Fabricante #IS43TR82560C-125KBL
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Em Estoque6946
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Especificações
| Atributo | Valor |
| Part Status | Active |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - DDR3 |
| Memory Size | 2Gbit |
| Memory Organization | 256M x 8 |
| Memory Interface | Parallel |
| Clock Frequency | 800 MHz |
| Write Cycle Time - Word, Page | 15ns |
| Access Time | 20 ns |
| Voltage - Supply | 1.425V ~ 1.575V |
| Operating Temperature | 0°C ~ 95°C (TC) |
| Mounting Type | Surface Mount |
| Package / Case | 78-TFBGA |
| Supplier Device Package | 78-TWBGA (8x10.5) |
| Base Product Number | IS43TR82560 |
Visão Geral
Description
Key specifications include a data rate of 1250 MT/s (mega-transfers per second) and a 16-bit wide data bus, allowing for efficient data transfer and processing. The chip operates at a voltage of 1.5V and adheres to the DDR3 standard, ensuring compatibility with a range of systems and devices.
This memory chip is utilized in applications where speed and efficiency are critical, such as in servers, routers, and consumer electronics. Its design emphasizes reliability and performance, making it a popular choice for manufacturers seeking robust memory solutions.
Overall, the IS43TR82560C-125KBL represents a versatile and efficient option for enhancing memory capacity and performance in various electronic devices.
Equivalent
1. MT41K256M16HA-125 (Micron)
2. H5TQ2G83CFR (SK Hynix)
3. K4B4G1646F-BCK0 (Samsung)
These chips have similar specifications and functionalities, suitable for use in similar applications. Always verify compatibility based on specific system requirements.
Features
1. Capacity: 256 Megabits (32 Megabytes) configuration.
2. Data Rate: Operates at a speed of 125 Mbps.
3. Architecture: 8-bit wide data interface with a synchronous interface.
4. Access Time: Offers low latency, suitable for high-speed applications.
5. Power Supply: Operates at a voltage of 2.5V, making it energy efficient.
6. Packaging: Available in a compact 54-ball TFBGA (Thin Fine Ball Grid Array) package.
7. Compatibility: Designed for use in various devices like mobile phones, digital cameras, and portable media players.
8. Temperature Range: Supports industrial temperature ranges for robust operation in diverse environments.
This memory chip is ideal for applications requiring quick access and efficient power consumption.
Pinout
The key functions of its pins include:
- Data Inputs/Outputs (DQ): 64 pins dedicated to data input and output.
- Address Inputs (A): 16 pins for the address bus.
- Control Pins (CMD): Includes pins for commands and control signals such as Chip Select (CS), Write Enable (WE), and Read Enable (RE).
- Clock Pins (CLK): For internal timing and synchronization.
- Power and Ground (VDD, VSS): Pins for power supply and ground connections.
This device operates at a frequency of 125 MHz and is designed for high-performance memory applications in various electronic devices.
Manufacturer
The IS43TR82560C-125KBL is a DDR3 SDRAM device with a capacity of 2 Gigabits (256 Megabytes) and operates at a clock speed of 125 MHz. It is used in applications requiring efficient data storage and retrieval capabilities. ISSI is recognized for its commitment to innovation and quality in memory technology, providing reliable and cost-effective solutions to its customers worldwide.
Application
1. Consumer Electronics: Used in smartphones, tablets, and gaming consoles for enhanced performance.
2. Networking Equipment: Integrated into routers and switches for efficient data processing.
3. Automotive Systems: Supports advanced driver-assistance systems (ADAS) and infotainment systems.
4. Industrial Applications: Employed in automation and control systems for reliable data storage.
5. Cloud Computing: Utilized in servers and data centers for memory-intensive applications.
Its low power consumption and high speed make it suitable for these diverse sectors.