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IC SRAM 1MBIT PARALLEL 44TSOP II
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FabricanteISSI, Integrated Silicon Solution Inc.
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Peça do Fabricante #IS61LV6416-10TLI
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Ficha Técnica IS61LV6416-10TLI DataSheet
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Especificações
| Atributo | Valor |
| Part Status | Active |
| Digi Key Programmable | Not Verified |
| Memory Type | Volatile |
| Memory Format | SRAM |
| Technology | SRAM - Asynchronous |
| Memory Size | 1Mbit |
| Memory Organization | 64K x 16 |
| Memory Interface | Parallel |
| Write Cycle Time - Word, Page | 10ns |
| Voltage - Supply | 3.135V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 44-TSOP (0.400", 10.16mm Width) |
| Supplier Device Package | 44-TSOP II |
| Base Product Number | IS61LV6416 |
| Access Time | 10 ns |
Visão Geral
Description
Designed with low-power consumption in mind, the IS61LV6416-10TLI is ideal for battery-operated devices and portable electronics. Its operational voltage range is typically 2.7V to 3.6V, enhancing its compatibility with modern electronic systems.
This SRAM supports asynchronous read and write operations, making it easy to integrate into various digital circuits. It is commonly used in applications such as networking equipment, telecommunications, and consumer electronics. Additionally, the chip comes in a small, compact package, facilitating space-saving designs in electronic applications.
Equivalent
Features
1. Density: 16 Megabit (2 Meg x 8 bits) configuration.
2. Access Time: Fast access time of 10 ns, suitable for high-speed applications.
3. Operating Voltage: Low power operation with a supply voltage of 2.7V to 3.6V.
4. Package Type: Available in a 44-pin TSOP II package, facilitating easy integration into various systems.
5. Memory Organization: Organized as 2M x 8 bits, allowing for efficient data handling.
6. Operating Temperature: Supports commercial (0°C to 70°C) and industrial (-40°C to 85°C) temperature ranges.
7. Low Power Consumption: Designed for minimal power usage, making it ideal for battery-operated devices.
8. Asynchronous Read/Write: Enables simple and fast access without the need for a clock signal.
These features make the IS61LV6416-10TLI suitable for applications in telecommunications, networking, and consumer electronics.
Pinout
- Address Inputs (A0-A15): 16 address lines to select one of the 64K memory locations.
- Data I/O (DQ0-DQ15): 16 data lines for reading from and writing to the memory.
- Chip Enable (CE): Activates the memory chip.
- Write Enable (WE): Controls write operations; when low, allows data writing.
- Output Enable (OE): Controls data output; when low, it enables output data to be driven on the data lines.
- Byte Enable (LB, UB): Allows for selective memory access to lower or upper byte.
The device operates with a supply voltage of 2.5V to 3.6V and offers low power consumption and fast access times.
Manufacturer
Application
1. Networking Equipment: Used in routers, switches, and telecommunications for fast data buffering.
2. Embedded Systems: Provides high-speed memory in microcontrollers and DSP applications.
3. Graphics Processing: Supports graphics cards and video processing units requiring high bandwidth memory.
4. Industrial Automation: Utilized in control systems and real-time data acquisition systems.
5. Consumer Electronics: Integrated into devices like gaming consoles and smart TVs for rapid data access.
Its low latency and high-speed performance make it ideal for demanding applications requiring quick data storage and retrieval.