IS61WV102416DBLL-10TLI

The IS61WV102416DBLL-10TLI is a high-speed, low-power CMOS static random-access memory (SRAM) by ISSI (Integrated Silicon Solution, Inc.). This device is designed for a variety of applications that require fast access times and low power consumption. It features a 16-bit data bus and is organized as 1M x 16 bits. The "10TLI" suffix indicates specific operational characteristics like a 10 ns access time, operating for industrial temperature ranges, and housed in a particular package type—often a Thin Small Outline Package (TSOP).
Key features include asynchronous operation, high-speed read/write cycles, and low standby and operating currents, which make it suitable for high-performance computing, networking, telecommunications, and consumer electronics. The SRAM operates over a wide voltage range and is designed for ease of system integration, providing excellent endurance and reliability due to its robust cell technology. This versatility makes it an ideal choice for systems where efficient data storage and quick retrieval are critical.

The IS61WV102416DBLL-10TLI is a 16M low-power asynchronous SRAM chip by ISSI. Equivalent products include:
1. CY62167EV30LL by Cypress Semiconductor
2. AS6C1616 by Alliance Memory
3. GS8180 by GSI Technology
These are similar in terms of capacity, power consumption, and package type, but always verify specifications and compatibility for your specific application.

The IS61WV102416DBLL-10TLI is a high-speed, low-power synchronous static RAM (SRAM) with a 16Mb (1M x 16) configuration. It features a 48-pin TSOP (Type I) package. The primary functions and pin descriptions are as follows:
1. Address Pins (A0-A19): Used to select one of the 1,048,576 memory locations.
2. Data Input/Output Pins (I/O0-I/O15): Serve as the data bus for read and write operations.
3. Chip Enable (CE#): Activates the chip when low; when high, the chip is in standby mode.
4. Write Enable (WE#): Enables write operations when low.
5. Output Enable (OE#): Enables the output buffers when low for read operations.
6. Byte Control Pins (LB#, UB#): Enable lower byte (I/O0-I/O7) and upper byte (I/O8-I/O15) for byte-wise operations.
7. Power Supply (Vcc): Typically operates at 3.3V.
8. Ground (Vss): Ground reference for the device.
This SRAM is typically used in applications requiring fast access to large memory storage.

The IS61WV102416DBLL-10TLI is manufactured by ISSI, or Integrated Silicon Solution, Inc. ISSI is a technology company that specializes in designing and developing high-performance integrated circuits. Their product portfolio includes a variety of memory and analog products, such as static random-access memory (SRAM), dynamic random-access memory (DRAM), and flash memory, as well as analog and mixed-signal integrated circuits. ISSI serves a variety of markets, including automotive, communications, industrial, medical, and consumer electronics, by providing reliable and long-lasting solutions tailored for specific applications.

The IS61WV102416DBLL-10TLI is a high-speed CMOS static RAM (SRAM) suitable for applications requiring fast data access and low power consumption. Its common application areas include:
1. Telecommunications: Used in network routers and switches for buffering and data storage.
2. Industrial Control Systems: Provides fast data retrieval in automation equipment and PLCs.
3. Consumer Electronics: Incorporated in devices like digital cameras and gaming consoles for temporary data storage.
4. Medical Devices: Utilized in diagnostic equipment for quick data processing.
5. Automotive Electronics: Supports real-time data processing in systems like GPS and infotainment units.
Its reliability and performance make it ideal for systems demanding efficient memory solutions.

The IS61WV102416DBLL-10TLI is typically offered in a TSOP-44 package type. TSOP stands for Thin Small Outline Package, which is designed to save space on circuit boards, and the number 44 indicates the number of pins or leads.