IXFH60N50P3

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IXFH60N50P3

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MOSFET N-CH 500V 60A TO247AD

  • FabricanteIXYS

  • Peça do Fabricante #IXFH60N50P3

  • Pacote TO-247

  • Em Estoque3494

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Especificações

Atributo Valor
Package / Case Tube
Series HiPerFET™, Polar3™
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V
Current - Continuous Drain(Id) @ 25°C 60A (Tc)
Drive Voltage(Max Rds On Min Rds On) 10V
Rds On(Max) @ Id Vgs 100mOhm @ 30A, 10V
Vgs(th)(Max) @ Id 5V @ 4mA
Gate Charge(Qg)(Max) @ Vgs 96 nC @ 10 V
Vgs(Max) ±30V
Input Capacitance(Ciss)(Max) @ Vds 6250 pF @ 25 V
Power Dissipation (Max) 1040W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247AD (IXFH)

Visão Geral

Description

The IXFH60N50P3 is a high-performance N-channel MOSFET designed for power applications. Key features include:
- Voltage Rating: 500V
- Current Rating: 60A (continuous)
- Low On-Resistance (RDS(on)): Typically 0.06Ω, reducing conduction losses
- Fast Switching: Optimized for efficiency in high-frequency circuits
- Robust Design: Suitable for industrial, automotive, and power supply systems
It is commonly used in switching power supplies, motor drives, and inverters due to its high efficiency and thermal stability. The TO-247 package ensures effective heat dissipation.
For detailed specifications, refer to the datasheet from the manufacturer.

Equivalent

Equivalent products to the IXFH60N50P3 (600V, 50A N-Channel MOSFET) include:
- IRFP460 (500V, 20A, similar but lower current)
- STP60NF06 (60V, 60A, lower voltage)
- FDPF51N25 (250V, 51A, lower voltage)
- IXFH50N60P3 (600V, 50A, close match)
For exact replacements, check IXFH60N50P3 alternatives from Infineon, STMicroelectronics, or Vishay. Verify specs before substitution.

Features

The IXFH60N50P3 is a high-performance N-channel MOSFET with the following key features:
- Voltage Rating: 500V
- Current Rating: 60A (continuous)
- Low On-Resistance (RDS(on)): 0.06Ω (typical)
- Fast Switching: Optimized for high-speed applications
- Avalanche Energy Rated: Robust against inductive loads
- Low Gate Charge (Qg): Enhances efficiency in switching circuits
- TO-247 Package: High power dissipation capability
- Applications: Suitable for power supplies, motor drives, and inverters
This MOSFET combines high voltage tolerance, low conduction losses, and fast switching, making it ideal for demanding power electronics.

Pinout

The IXFH60N50P3 is a TO-247 packaged N-channel MOSFET with 3 pins (Gate, Drain, Source).
Key Functions:
- Drain (D): High-voltage terminal (500V max).
- Gate (G): Controls switching (20V max).
- Source (S): Current return path.
Specs:
- VDS: 500V
- ID: 60A (continuous)
- RDS(on): 0.06Ω (typ.)
Designed for high-power switching (e.g., inverters, motor drives).

Application

The IXFH60N50P3 is a high-voltage N-channel MOSFET designed for power applications. Key application areas include:
- Switched-Mode Power Supplies (SMPS): Efficient power conversion in AC/DC and DC/DC systems.
- Motor Drives: Used in industrial and automotive motor control circuits.
- Inverters: Supports solar inverters and UPS systems for energy conversion.
- Induction Heating: High-frequency power switching in heating systems.
- Electronic Ballasts: Drives lighting systems like HID and fluorescent lamps.
Its high voltage (500V) and current (60A) ratings make it suitable for demanding power electronics.

Package

The IXFH60N50P3 is a power MOSFET housed in a TO-247 package. This package type is robust, suitable for high-power applications, and features three leads for gate, drain, and source connections. It offers excellent thermal performance and is commonly used in switching power supplies, motor drives, and other high-current circuits.

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