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IXFK52N100X
+Lista de MateriaisMOSFET N-CH 1000V 52A TO264
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FabricanteLittelfuse Inc.
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Peça do Fabricante #IXFK52N100X
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Em Estoque6285
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Especificações
| Atributo | Valor |
| Series | HiPerFET™, Ultra X |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 1000 V |
| Current - Continuous Drain (Id) @ 25°C | 52A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 125mOhm @ 26A, 10V |
| Vgs(th) (Max) @ Id | 6V @ 4mA |
| Gate Charge (Qg) (Max) @ Vgs | 245 nC @ 10 V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 6725 pF @ 25 V |
| Power Dissipation (Max) | 1250W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-264 |
| Package / Case | TO-264-3, TO-264AA |
| Base Product Number | IXFK52 |
Visão Geral
Description
Key features include low on-resistance (R_DS(on)), which minimizes power loss during operation, and fast switching speeds, enabling efficient energy conversion. The device is packaged in a TO-220 form factor, allowing for effective heat dissipation and easy integration into electronic circuits.
Designed for robustness, the IXFK52N100X supports high-temperature operation, making it ideal for demanding environments. Its ability to handle high voltages and currents with reliability makes it a popular choice among engineers in both industrial and consumer electronics applications. Overall, the IXFK52N100X is a versatile and efficient component in modern power management systems.
Equivalent
1. IRF520
2. STP55NF100
3. FQP50N100
4. BUK9535-100A
Always check specific datasheets for detailed specifications such as VDS, ID, RDS(on), and package type to ensure compatibility for your application.
Features
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 100V.
2. Current Rating: It can handle continuous drain current (I_D) up to 52A, making it suitable for high-power applications.
3. R_DS(on): The on-resistance is low, typically around 0.065 ohms, which helps minimize power loss and increase efficiency.
4. Gate Threshold Voltage: The gate-source threshold (V_GS(th)) ranges from 2V to 4V, allowing for easy drive with typical logic levels.
5. Package Type: It comes in a TO-220 package, facilitating effective heat dissipation.
6. Fast Switching Speed: Ideal for switching applications, it offers quick turn-on and turn-off characteristics.
7. Thermal Resistance: Low thermal resistance ensures better thermal management.
These features make the IXFK52N100X suitable for various applications, including motor control, power supplies, and DC-DC converters.
Pinout
1. Gate (G) - Controls the switching of the MOSFET.
2. Drain (D) - The terminal where the output current flows out.
3. Source (S) - The terminal where the input current flows in.
4. Body (B) - Usually internally connected to the source terminal.
This MOSFET is designed for high-voltage applications, boasting a maximum drain-source voltage (V_DS) of 100V and a continuous drain current (I_D) of 52A. It’s commonly used in power management, motor control, and various switching applications due to its high efficiency and fast switching capabilities. Always refer to the manufacturer's datasheet for detailed specifications and characteristics.
Manufacturer
Application
1. Switching Power Supplies: Utilized in DC-DC converters and inverters for efficient power conversion.
2. Motor Control: Employed in drive circuits for electric motors, enabling precise control of speed and torque.
3. Power Management: Used in power management systems for load switching and energy efficiency.
4. Industrial Applications: Applied in automation and control systems for robust and reliable operation.
5. Renewable Energy: Incorporated in solar inverters and wind turbine controllers for energy conversion and management.
Its high voltage and current ratings make it suitable for demanding environments.