Imagens apenas para referência
IXFN180N10
+Lista de MateriaisMOSFET N-CH 100V 180A SOT-227B
-
FabricanteIXYS
-
Peça do Fabricante #IXFN180N10
-
Em Estoque7820
365 Garantia de Qualidade em 1 dia
7*24 Garantia de serviço em 24 horas
90-Garantia de pós-venda em 1 dia
Garantia de Produto Genuíno
Especificações
| Atributo | Valor |
| Series | HiPerFET™ |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain (Id) @ 25°C | 180A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 8mOhm @ 500mA, 10V |
| Vgs(th) (Max) @ Id | 4V @ 8mA |
| Gate Charge (Qg) (Max) @ Vgs | 360 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 9100 pF @ 25 V |
| Power Dissipation (Max) | 600W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Chassis Mount |
| Supplier Device Package | SOT-227B |
| Package / Case | SOT-227-4, miniBLOC |
| Base Product Number | IXFN180 |
Visão Geral
Description
The IXFN180N10 is a high-performance N-channel MOSFET manufactured by IXYS, known for its suitability in various power applications. With a voltage rating of 1000V and a continuous current rating of 180A, it is designed for use in high-efficiency power conversion, motor drives, and other demanding environments.
Key features include low on-resistance (R_DS(on)), which minimizes power losses and heat generation during operation. The device also boasts fast switching speeds, making it ideal for applications requiring rapid turn-on and turn-off cycles. Its robust construction ensures reliability in harsh conditions, contributing to its longevity in industrial applications.
The IXFN180N10 is packaged in a TO-247 format, facilitating effective thermal management and easy integration into existing systems. Overall, it is a versatile component for engineers seeking efficient solutions in high-voltage applications.
Key features include low on-resistance (R_DS(on)), which minimizes power losses and heat generation during operation. The device also boasts fast switching speeds, making it ideal for applications requiring rapid turn-on and turn-off cycles. Its robust construction ensures reliability in harsh conditions, contributing to its longevity in industrial applications.
The IXFN180N10 is packaged in a TO-247 format, facilitating effective thermal management and easy integration into existing systems. Overall, it is a versatile component for engineers seeking efficient solutions in high-voltage applications.
Equivalent
The IXFN180N10 is a 180A, 1000V N-channel MOSFET. Equivalent products include:
1. STP180N10 (STMicroelectronics)
2. IRF180 (Infineon)
3. FQP180N10 (ON Semiconductor)
4. BSC180N10 (Infineon)
Always check specific datasheets for precise characteristics and ensure compatibility with your application.
1. STP180N10 (STMicroelectronics)
2. IRF180 (Infineon)
3. FQP180N10 (ON Semiconductor)
4. BSC180N10 (Infineon)
Always check specific datasheets for precise characteristics and ensure compatibility with your application.
Features
The IXFN180N10 is a high-performance N-channel MOSFET designed for power applications. Here are its key features:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 100V, making it suitable for a wide range of applications.
2. Current Rating: It can handle continuous drain currents (I_D) of up to 180A, providing robust performance in demanding conditions.
3. Low R_DS(on): The MOSFET has a low on-resistance, typically around 10 mΩ, which minimizes power loss and improves efficiency.
4. Fast Switching: It offers rapid switching capabilities, making it ideal for high-frequency applications.
5. Thermal Performance: The device features a low thermal resistance, ensuring effective heat dissipation.
6. Package Type: It comes in a TO-220 package, allowing for easy mounting and heat sinking.
Overall, the IXFN180N10 is suitable for applications in power supplies, motor drives, and other power management tasks due to its excellent thermal and electrical performance.
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 100V, making it suitable for a wide range of applications.
2. Current Rating: It can handle continuous drain currents (I_D) of up to 180A, providing robust performance in demanding conditions.
3. Low R_DS(on): The MOSFET has a low on-resistance, typically around 10 mΩ, which minimizes power loss and improves efficiency.
4. Fast Switching: It offers rapid switching capabilities, making it ideal for high-frequency applications.
5. Thermal Performance: The device features a low thermal resistance, ensuring effective heat dissipation.
6. Package Type: It comes in a TO-220 package, allowing for easy mounting and heat sinking.
Overall, the IXFN180N10 is suitable for applications in power supplies, motor drives, and other power management tasks due to its excellent thermal and electrical performance.
Pinout
The IXFN180N10 is an N-channel MOSFET with a total of 3 pins. The pin configuration and their functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage to the gate allows current to flow between the drain and source.
2. Drain (D): This pin is the output where the load is connected. Current flows from the drain to the source when the MOSFET is turned on.
3. Source (S): This pin is connected to the ground or negative terminal of the power supply. It is the point from which the current exits the MOSFET when it is conducting.
The IXFN180N10 is designed for high efficiency and can handle a maximum drain-source voltage (V_DS) of 100V and a continuous drain current (I_D) of up to 180A, making it suitable for various high-power applications.
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage to the gate allows current to flow between the drain and source.
2. Drain (D): This pin is the output where the load is connected. Current flows from the drain to the source when the MOSFET is turned on.
3. Source (S): This pin is connected to the ground or negative terminal of the power supply. It is the point from which the current exits the MOSFET when it is conducting.
The IXFN180N10 is designed for high efficiency and can handle a maximum drain-source voltage (V_DS) of 100V and a continuous drain current (I_D) of up to 180A, making it suitable for various high-power applications.
Manufacturer
The IXFN180N10 is manufactured by IXYS Corporation, which is now a part of Littelfuse, Inc. IXYS specializes in semiconductor products, including power MOSFETs, IGBTs, and other power management solutions. The company focuses on high-performance power and analog products tailored for various applications, including industrial, automotive, and telecommunications sectors. Littelfuse acquired IXYS in 2018 to enhance its portfolio in power semiconductors and to leverage IXYS's expertise in high-voltage and high-speed devices. Overall, IXYS is recognized for its innovative semiconductor solutions that address the needs of modern electronic systems.
Application
The IXFN180N10 is an N-channel MOSFET primarily used in high-power applications such as power supplies, motor drives, and DC-DC converters. Its features, including low on-resistance and high-speed switching capabilities, make it suitable for automotive applications, industrial equipment, and renewable energy systems like solar inverters. Additionally, it can be utilized in detailed electronic circuit designs where efficient power management is crucial, including battery management systems and audio amplifiers.
Package
The IXFN180N10 is typically packaged in a TO-220 format, which is a robust, insulated package that allows for efficient heat dissipation, making it suitable for high-power applications.
