IXFN320N17T2

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IXFN320N17T2

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MOSFET N-CH 170V 260A SOT227B

  • FabricanteIXYS

  • Peça do Fabricante #IXFN320N17T2

  • Pacote SOT-227-4

  • Em Estoque2146

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Especificações

Atributo Valor
Package / Case Tube
Series HiPerFET™, TrenchT2™
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 170 V
Current - Continuous Drain(Id) @ 25°C 260A (Tc)
Drive Voltage(Max Rds On Min Rds On) 10V
Rds On(Max) @ Id Vgs 5.2mOhm @ 60A, 10V
Vgs(th)(Max) @ Id 5V @ 8mA
Gate Charge(Qg)(Max) @ Vgs 640 nC @ 10 V
Vgs(Max) ±20V
Input Capacitance(Ciss)(Max) @ Vds 45000 pF @ 25 V
Power Dissipation (Max) 1070W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Chassis Mount
Supplier Device Package SOT-227B

Visão Geral

Description

The IXFN320N17T2 is a high-performance N-channel MOSFET designed for power applications. Key features include:
- Voltage Rating: 170V
- Current Rating: 320A (pulsed)
- Low On-Resistance (RDS(on)): 1.7mΩ (typical)
- Package: TO-247, optimized for thermal efficiency
- Applications: High-power switching, motor drives, inverters, and industrial systems
Its low conduction losses and high current-handling capability make it suitable for demanding environments. The robust TO-247 package ensures effective heat dissipation, enhancing reliability in high-power circuits.
For detailed specs, refer to the datasheet.

Features

The IXFN320N17T2 is a high-performance N-channel MOSFET with the following key features:
- Voltage Rating: 170V
- Current Rating: 320A (continuous)
- Low On-Resistance (RDS(on)): 1.7mΩ (typical at VGS=10V)
- Fast Switching: Optimized for high-efficiency power applications
- Package: TO-264 (3-lead), suitable for high-power designs
- Avalanche Energy Rated: Robust against inductive load spikes
- Low Gate Charge (Qg): Enhances switching efficiency
Ideal for motor drives, inverters, and high-current DC/DC converters.

Pinout

The IXFN320N17T2 is a power MOSFET in a TO-264 (TO-3P) package with 3 pins:
1. Gate (G) – Controls the switching operation.
2. Drain (D) – Main current input (connected to the load).
3. Source (S) – Main current output (connected to ground).
Key Features:
- VDS: 170V
- ID: 320A (pulsed)
- Low on-resistance (RDS(on)).
- Designed for high-power applications like motor drives and inverters.
The pinout is standard for TO-264: Gate (left), Drain (center tab), Source (right) when facing the labeled side.

Application

The IXFN320N17T2, a high-power N-channel MOSFET, is commonly used in:
1. Power Supplies – High-efficiency DC-DC converters and SMPS.
2. Motor Control – Drives for industrial and automotive applications.
3. Renewable Energy – Inverters for solar and wind power systems.
4. Automotive Systems – Electric vehicle (EV) power management and battery systems.
5. Industrial Equipment – High-current switching in robotics and automation.
Its low on-resistance (RDS(on)) and high current handling (320A) make it ideal for demanding power electronics.

Package

The IXFN320N17T2 is a power MOSFET housed in a TO-264 package (also known as SOT-227B). This package is designed for high-power applications, offering excellent thermal performance with a large mounting surface for heat dissipation. It features four leads, including a central tab for efficient heat transfer to a heatsink. Suitable for high-current and high-voltage operations.

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