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IXFN60N80P
+Lista de MateriaisMOSFET N-CH 800V 53A SOT-227B
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FabricanteIXYS
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Peça do Fabricante #IXFN60N80P
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Especificações
| Atributo | Valor |
| Supplier | IXYS |
| Package / Case | Tube |
| Series | HiPerFET™, Polar |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 800 V |
| Current - Continuous Drain(Id) @ 25°C | 53A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 140mOhm @ 30A, 10V |
| Vgs(th)(Max) @ Id | 5V @ 8mA |
| Gate Charge(Qg)(Max) @ Vgs | 250 nC @ 10 V |
| Vgs(Max) | ±30V |
| Input Capacitance(Ciss)(Max) @ Vds | 18000 pF @ 25 V |
| Power Dissipation (Max) | 1040W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Chassis Mount |
| Supplier Device Package | SOT-227B |
Visão Geral
Description
The IXFN60N80P is a high-power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for applications requiring high efficiency and fast switching. It is part of the IXYS range and features a voltage rating of 800V and a continuous current capacity of 60A. This makes it suitable for demanding power electronics applications, such as inverter circuits, power supplies, and motor drives.
Key features of the IXFN60N80P include a low on-resistance, which minimizes power loss and heat generation, enhancing overall efficiency. The device is built using advanced silicon technology, offering robustness and reliability under thermal and electrical stress.
The IXFN60N80P comes in a TO-264 package, which provides excellent thermal performance and facilitates ease of mounting on PCBs or heat sinks. With its high voltage and current capabilities, it is particularly well-suited for industrial and commercial applications requiring rapid switching and high power handling.
Overall, the IXFN60N80P offers a balance of performance, efficiency, and durability for high-power electronic applications.
Key features of the IXFN60N80P include a low on-resistance, which minimizes power loss and heat generation, enhancing overall efficiency. The device is built using advanced silicon technology, offering robustness and reliability under thermal and electrical stress.
The IXFN60N80P comes in a TO-264 package, which provides excellent thermal performance and facilitates ease of mounting on PCBs or heat sinks. With its high voltage and current capabilities, it is particularly well-suited for industrial and commercial applications requiring rapid switching and high power handling.
Overall, the IXFN60N80P offers a balance of performance, efficiency, and durability for high-power electronic applications.
Equivalent
The IXFN60N80P is a power MOSFET from IXYS. Equivalent products could be found by checking similar specifications such as voltage, current, and package type in other manufacturers' catalogs. Some potential equivalents might include the STMicroelectronics STW60NM80 or the Infineon IPW60R045CP, although exact equivalency should be verified based on detailed electrical characteristics and application requirements. Always consult datasheets to ensure compatibility.
Features
The IXFN60N80P is an advanced power semiconductor component known for its high efficiency and reliability. Key features include:
1. N-Channel MOSFET: It utilizes an N-channel structure, which provides efficient conduction and switching performance.
2. Voltage and Current Ratings: The MOSFET can handle a maximum drain-source voltage (V_DS) of 800V and a continuous drain current (I_D) of approximately 60A, making it suitable for high-power applications.
3. Low On-State Resistance: It exhibits a low on-state resistance (R_DS(on)), which minimizes power loss and improves efficiency during operation.
4. Robust Design: The device is built to withstand high levels of stress and has good thermal performance, making it durable under various operating conditions.
5. Applications: The IXFN60N80P is ideal for use in power supplies, motor controls, inverters, and other high-power electronic circuits.
These features make the IXFN60N80P a versatile choice for demanding applications requiring high voltage and current handling capabilities.
1. N-Channel MOSFET: It utilizes an N-channel structure, which provides efficient conduction and switching performance.
2. Voltage and Current Ratings: The MOSFET can handle a maximum drain-source voltage (V_DS) of 800V and a continuous drain current (I_D) of approximately 60A, making it suitable for high-power applications.
3. Low On-State Resistance: It exhibits a low on-state resistance (R_DS(on)), which minimizes power loss and improves efficiency during operation.
4. Robust Design: The device is built to withstand high levels of stress and has good thermal performance, making it durable under various operating conditions.
5. Applications: The IXFN60N80P is ideal for use in power supplies, motor controls, inverters, and other high-power electronic circuits.
These features make the IXFN60N80P a versatile choice for demanding applications requiring high voltage and current handling capabilities.
Pinout
The IXFN60N80P is a high-power IGBT (Insulated Gate Bipolar Transistor) module. It typically comes in a module package, and its pin count and functions can vary slightly based on the manufacturer’s packaging specifications. Generally, these modules have multiple pins for the main terminals and auxiliary connections. The primary pins include:
1. Collector (C): The main current-carrying terminal.
2. Emitter (E): The terminal where the current exits the IGBT.
3. Gate (G): The control terminal used to turn the IGBT on and off.
In addition to these, there might be auxiliary pins for features like gate drive supply, temperature sensing, or other monitoring purposes, depending on the specific module version. Always refer to the manufacturer's datasheet for precise pin configuration and count, as it can vary between specific module designs and manufacturers.
1. Collector (C): The main current-carrying terminal.
2. Emitter (E): The terminal where the current exits the IGBT.
3. Gate (G): The control terminal used to turn the IGBT on and off.
In addition to these, there might be auxiliary pins for features like gate drive supply, temperature sensing, or other monitoring purposes, depending on the specific module version. Always refer to the manufacturer's datasheet for precise pin configuration and count, as it can vary between specific module designs and manufacturers.
Manufacturer
The IXFN60N80P is manufactured by IXYS Corporation, which is a company specializing in power semiconductors and integrated circuits. IXYS Corporation, founded in 1983, is known for designing and manufacturing a wide range of power semiconductor products, including MOSFETs, IGBTs, and power modules. These components are typically used in applications such as power conversion, motor control, medical electronics, renewable energy, and industrial automation. IXYS products are often utilized in high-efficiency power management solutions, contributing to the company's reputation for innovation in the power electronics industry.
Application
The IXFN60N80P is a high-power, N-channel MOSFET known for its robustness and efficiency. Its primary application areas include:
1. Power Electronics: Used in inverters, converters, and power supplies due to its high voltage and current handling capabilities.
2. Motor Drives: Suitable for controlling electric motors in industrial and automotive applications, offering efficient switching performance.
3. Renewable Energy Systems: Utilized in solar inverters and wind turbine converters for efficient energy conversion.
4. Industrial Automation: Employed in systems requiring precise control and high power handling.
5. Uninterruptible Power Supplies (UPS): Used in backup power solutions to ensure reliable performance.
These applications leverage its low on-resistance and fast switching speed.
1. Power Electronics: Used in inverters, converters, and power supplies due to its high voltage and current handling capabilities.
2. Motor Drives: Suitable for controlling electric motors in industrial and automotive applications, offering efficient switching performance.
3. Renewable Energy Systems: Utilized in solar inverters and wind turbine converters for efficient energy conversion.
4. Industrial Automation: Employed in systems requiring precise control and high power handling.
5. Uninterruptible Power Supplies (UPS): Used in backup power solutions to ensure reliable performance.
These applications leverage its low on-resistance and fast switching speed.
Package
The IXFN60N80P is a power MOSFET that comes in an SOT-227B package type. This package is also known as a miniBLOC or ISOPLUS package, designed for high-power applications with excellent thermal performance and ease of mounting.
