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IXFX180N10
+Lista de MateriaisMOSFET N-CH 100V 180A PLUS247
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FabricanteIXYS
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Peça do Fabricante #IXFX180N10
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Especificações
| Atributo | Valor |
| Series | HiPerFET™ |
| Part Status | Not For New Designs |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain (Id) @ 25°C | 180A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 8mOhm @ 90A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 8mA |
| Gate Charge (Qg) (Max) @ Vgs | 390 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 10900 pF @ 25 V |
| Power Dissipation (Max) | 560W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | PLUS247™-3 |
| Package / Case | TO-247-3 Variant |
| Base Product Number | IXFX180 |
Visão Geral
Description
The IXFX180N10 is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for efficient power management applications. It typically features a maximum drain-source voltage (V_DS) of 100V and a continuous drain current (I_D) of 180A, making it suitable for demanding tasks like DC-DC converters, motor drives, and power inverters.
Key characteristics include low on-resistance (R_DS(on)), which minimizes power loss and heat generation during operation, leading to improved efficiency. Its fast switching capabilities are ideal for high-frequency applications, enhancing overall system performance.
The IXFX180N10 is constructed to provide robust thermal management, often featuring a TO-220 or similar package for effective heat dissipation. Applications range from telecommunications to renewable energy systems, emphasizing its versatility in modern electronic designs.
Engineers and designers appreciate the IXFX180N10 for its reliability, performance, and ability to handle high power levels, making it a popular choice in the power electronics industry.
Key characteristics include low on-resistance (R_DS(on)), which minimizes power loss and heat generation during operation, leading to improved efficiency. Its fast switching capabilities are ideal for high-frequency applications, enhancing overall system performance.
The IXFX180N10 is constructed to provide robust thermal management, often featuring a TO-220 or similar package for effective heat dissipation. Applications range from telecommunications to renewable energy systems, emphasizing its versatility in modern electronic designs.
Engineers and designers appreciate the IXFX180N10 for its reliability, performance, and ability to handle high power levels, making it a popular choice in the power electronics industry.
Equivalent
The IXFX180N10 is a high-voltage MOSFET. Equivalent products include the Infineon IRF180, STMicroelectronics STP180N10, and ON Semiconductor NTP180N10. When selecting a substitute, check parameters like voltage rating (100V), current rating (180A), and R_DS(on) for compatibility. Always verify specifications to ensure they meet your application requirements.
Features
The IXFX180N10 is an N-channel MOSFET designed for high-efficiency power applications. Key features include:
1. Voltage Rating: It supports a maximum drain-to-source voltage (V_DS) of 100V.
2. Current Handling: The device can handle continuous drain currents up to 180A, making it suitable for high-power applications.
3. Low R_DS(on): It offers a low on-resistance (R_DS(on)), typically around 10 mΩ, which reduces power losses and enhances efficiency.
4. Fast Switching: The IXFX180N10 is optimized for fast switching speeds, making it ideal for switching power supplies and converters.
5. Thermal Performance: It features excellent thermal management capabilities, allowing for effective heat dissipation.
6. Package: Available in a robust TO-220 package, facilitating easy heat sinking and PCB mounting.
7. Applications: Commonly used in automotive, industrial, and consumer electronics for power management and control.
These features make the IXFX180N10 a versatile option for various high-performance electronic applications.
1. Voltage Rating: It supports a maximum drain-to-source voltage (V_DS) of 100V.
2. Current Handling: The device can handle continuous drain currents up to 180A, making it suitable for high-power applications.
3. Low R_DS(on): It offers a low on-resistance (R_DS(on)), typically around 10 mΩ, which reduces power losses and enhances efficiency.
4. Fast Switching: The IXFX180N10 is optimized for fast switching speeds, making it ideal for switching power supplies and converters.
5. Thermal Performance: It features excellent thermal management capabilities, allowing for effective heat dissipation.
6. Package: Available in a robust TO-220 package, facilitating easy heat sinking and PCB mounting.
7. Applications: Commonly used in automotive, industrial, and consumer electronics for power management and control.
These features make the IXFX180N10 a versatile option for various high-performance electronic applications.
Pinout
The IXFX180N10 is an N-channel MOSFET with a pin count of 6. The pin configuration and functions are as follows:
1. Gate (G): Controls the MOSFET's operation by turning it on or off.
2. Drain (D): The output terminal where the load is connected.
3. Source (S): The terminal that connects to ground or the negative side of the circuit.
4. Body Diode (integrated): Provides a path for current when the MOSFET is off, useful for inductive loads.
5. Thermal Pad: For heat dissipation, typically connected to the source.
This device is suitable for high-efficiency switching applications, with low on-resistance and high-speed performance.
1. Gate (G): Controls the MOSFET's operation by turning it on or off.
2. Drain (D): The output terminal where the load is connected.
3. Source (S): The terminal that connects to ground or the negative side of the circuit.
4. Body Diode (integrated): Provides a path for current when the MOSFET is off, useful for inductive loads.
5. Thermal Pad: For heat dissipation, typically connected to the source.
This device is suitable for high-efficiency switching applications, with low on-resistance and high-speed performance.
Manufacturer
The IXFX180N10 is manufactured by IXYS Corporation, a company known for its expertise in power semiconductor products. IXYS specializes in designing and manufacturing advanced power management and signal processing solutions, including MOSFETs, IGBTs, and diodes. Founded in 1983 and headquartered in Milpitas, California, IXYS serves various industries such as telecommunications, automotive, and renewable energy. The company focuses on high-performance products that enhance energy efficiency and reliability in electronic systems. In 2018, IXYS was acquired by Littelfuse, Inc., further expanding its capabilities and market reach in the power semiconductor sector.
Application
The IXFX180N10 is an N-channel MOSFET primarily used in power electronics applications. Key areas include:
1. Power Supplies: Used in AC-DC converters and DC-DC converters for efficient switching.
2. Motor Drives: Suitable for controlling motors in industrial and automotive applications.
3. Renewable Energy: Employed in solar inverters and battery management systems.
4. Heat Management: Effective in applications requiring thermal management due to its high efficiency.
5. Consumer Electronics: Used in power management circuits for devices like laptops and smartphones.
Its high voltage and current ratings make it ideal for demanding applications.
1. Power Supplies: Used in AC-DC converters and DC-DC converters for efficient switching.
2. Motor Drives: Suitable for controlling motors in industrial and automotive applications.
3. Renewable Energy: Employed in solar inverters and battery management systems.
4. Heat Management: Effective in applications requiring thermal management due to its high efficiency.
5. Consumer Electronics: Used in power management circuits for devices like laptops and smartphones.
Its high voltage and current ratings make it ideal for demanding applications.
Package
The IXFX180N10 is typically packaged in a TO-220 format. This package type is widely used for power devices due to its good thermal performance and ease of mounting on heatsinks.
