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IXTA3N150HV
+Lista de MateriaisMOSFET N-CH 1500V 3A TO263
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FabricanteIXYS
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Peça do Fabricante #IXTA3N150HV
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Pacote TO-263-3
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Em Estoque6663
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Especificações
| Atributo | Valor |
| Package / Case | Tube |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 1500 V |
| Current - Continuous Drain(Id) @ 25°C | 3A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 7.3Ohm @ 1.5A, 10V |
| Vgs(th)(Max) @ Id | 5V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 38.6 nC @ 10 V |
| Vgs(Max) | ±30V |
| Input Capacitance(Ciss)(Max) @ Vds | 1375 pF @ 25 V |
| Power Dissipation (Max) | 250W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-263AA |
Visão Geral
Description
The IXTA3N150HV is housed in a TO-220 package, providing good thermal performance and ease of mounting in various circuit designs. It is often used in power supply circuits, switching applications, and industrial equipment where high-voltage handling is crucial. Additionally, the device supports fast switching speeds, contributing to its efficiency in managing power conversion and distribution tasks.
Overall, the IXTA3N150HV is a versatile and reliable component for engineers seeking a high-voltage MOSFET solution capable of handling demanding operational conditions while maintaining energy efficiency.
Equivalent
Features
1. Voltage Rating: It can handle a maximum drain-source voltage of 150V, making it suitable for medium to high voltage applications.
2. Current Rating: The device supports a continuous drain current of up to 3A, which is suitable for moderate power applications.
3. On-Resistance: It features a low on-resistance, typically around 1.4 ohms, which contributes to better efficiency by reducing power losses during operation.
4. Gate Threshold Voltage: The gate threshold voltage is typically between 2V to 4V, allowing it to be driven by standard logic levels.
5. Package Type: The IXTA3N150HV comes in a TO-220 package, offering ease of mounting and good thermal performance.
6. Thermal Management: It supports efficient heat dissipation, making it suitable for applications where thermal performance is critical.
These features make the IXTA3N150HV ideal for use in power supply circuits, motor control, and other applications requiring efficient switching.
Pinout
1. Gate (G): This pin is used to control the MOSFET. By applying a voltage to the gate, you can turn the MOSFET on or off, allowing or stopping the flow of current between the drain and source.
2. Drain (D): This is the pin through which the main current flows when the MOSFET is in the "on" state. It is connected to the load in most applications.
3. Source (S): This pin is connected to the ground or negative side of the circuit. It serves as the return path for the current flowing through the MOSFET.
The IXTA3N150HV is designed for high-voltage applications, with a maximum drain-source voltage (V_DS) of 1500V and a continuous drain current (I_D) of approximately 3A, making it suitable for switching and amplification applications in high-voltage circuits.
Manufacturer
Application
1. Switching Power Supplies: Used for efficient voltage conversion and regulation.
2. Motor Control: Ideal for driving motors in industrial and consumer electronics.
3. LED Lighting: Helps in controlling LEDs in lighting systems.
4. Battery Management: Used in charging and discharging circuits for battery-powered devices.
5. Power Inverters: Facilitates DC to AC conversion in inverter systems.
6. Audio Amplifiers: Provides efficient power delivery in audio amplification circuits.
Its high voltage capability and efficiency make it suitable for these applications.