IXTT16N10D2

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IXTT16N10D2

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MOSFET N-CH 100V 16A TO268

  • FabricanteIXYS

  • Peça do Fabricante #IXTT16N10D2

  • Em Estoque3920

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Especificações

Atributo Valor
Series Depletion
Part Status Obsolete
FET Type N-Channel, Depletion Mode
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 0V
Rds On (Max) @ Id, Vgs 64mOhm @ 8A, 0V
Gate Charge (Qg) (Max) @ Vgs 225 nC @ 5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 5700 pF @ 25 V
Power Dissipation (Max) 830W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-268AA
Package / Case TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Base Product Number IXTT16

Visão Geral

Description

The IXTT16N10D2 is a high-performance N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) designed for efficient switching applications. It features a maximum drain-source voltage (VDS) of 100V and a continuous drain current (ID) of 16A, making it suitable for power management in various electronic circuits. The device’s low on-resistance (RDS(on)) contributes to minimal power loss and heat generation, enhancing overall efficiency.
Applications include power supplies, motor controls, and energy conversion systems. The IXTT16N10D2 is often used in conjunction with gate drivers to improve switching speeds and performance in high-frequency applications. Its compact package design allows for easy integration into space-constrained environments.
Key specifications include a maximum gate-source voltage (VGS) rating of ±20V, robust thermal performance, and high-speed switching capabilities. Overall, the IXTT16N10D2 is an excellent choice for engineers seeking reliable and efficient MOSFET solutions in various electronic applications.

Equivalent

Equivalent products to the IXTT16N10D2 chip include the STMicroelectronics STP16NF10, Infineon IRF3205, and Vishay SiHF16N10. These MOSFETs share similar specifications, such as voltage and current ratings. Always verify compatibility based on specific application requirements.

Features

The IXTT16N10D2 is an N-channel MOSFET designed for high-performance applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 100V, making it suitable for high-voltage applications.
2. Current Handling: The device can handle a continuous drain current (I_D) of 16A, with a pulsed current capability of up to 60A.
3. R_DS(on): It offers low on-resistance (approximately 0.130 ohms), which enhances efficiency and reduces power losses during operation.
4. Gate Threshold Voltage: The gate-source threshold voltage (V_GS(th)) ranges from 2V to 4V, allowing it to be driven easily by low-voltage logic levels.
5. Fast Switching: The IXTT16N10D2 features fast switching speeds, making it suitable for applications such as DC-DC converters and motor drives.
6. Package Type: It is available in a TO-220 package, facilitating heat dissipation and easy mounting.
Overall, the IXTT16N10D2 is ideal for power management and switching applications in various electronic circuits.

Pinout

The IXTT16N10D2 is an N-channel MOSFET with a pin count of 3. The pin configuration is as follows:
1. Gate (G) - This pin is used to control the MOSFET's switching; applying a voltage here turns the device on.
2. Drain (D) - This pin is the output where the load is connected; current flows from the drain when the MOSFET is on.
3. Source (S) - This pin is connected to the ground or the negative side of the circuit.
The IXTT16N10D2 is designed for high-speed switching applications and has a maximum drain current of 16A and a maximum drain-source voltage of 100V. It is commonly used in power management, switching power supplies, and motor control applications.

Manufacturer

The IXTT16N10D2 is manufactured by IXYS Corporation, a subsidiary of Littelfuse, Inc. IXYS specializes in the design and production of power semiconductors, including MOSFETs, IGBTs, and diode products, as well as integrated circuits and system solutions for power management. Founded in 1983, IXYS has built a strong reputation in the semiconductor industry for high-performance and high-reliability components used in various applications such as renewable energy, industrial, automotive, and telecommunications. The company focuses on innovation and advanced technology to cater to the evolving needs of power electronics, often emphasizing solutions that enhance energy efficiency and performance in electronic systems.

Application

The IXTT16N10D2 is a N-channel MOSFET primarily used in power management applications. Its key areas include:
1. Switching Power Supplies: Efficiently converting and regulating voltage in power supplies.
2. Motor Control: Managing power delivery to motors in industrial and automotive applications.
3. DC-DC Converters: High-efficiency operation in chipsets and battery management systems.
4. LED Drivers: Controlling current for LED lighting applications.
5. Inverters: Used in renewable energy systems for converting DC to AC.
Its high voltage and current ratings make it suitable for various power electronic circuits.

Package

The IXTT16N10D2 is typically packaged in a TO-220 format. This package type provides good thermal performance and is commonly used for power transistors, allowing for efficient heat dissipation in various electronic applications.

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