K4A4G165WF-BCWE

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K4A4G165WF-BCWE

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4Gbit 1.2V 1.6GHz DDR4 SDRAM FBGA-96 Memory (ICs) RoHS

  • FabricanteSamsung

  • Peça do Fabricante #K4A4G165WF-BCWE

  • Em Estoque12730

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Especificações

Atributo Valor
Packaging FBGA-96
Clock Frequency 1.6GHz
Memory Format DDR4 SDRAM
Memory Size 4Gbit
Operating temperature 0℃~+85℃
Voltage - Supply 1.2V

Visão Geral

Description

The K4A4G165WF-BCWE is a 4Gb (512M x 8) DDR4 SDRAM chip from Samsung, designed for high-speed, low-power applications. Key features include:
- Density: 4 Gigabits (512M x 8)
- Speed: 2133 Mbps (DDR4-2133)
- Voltage: 1.2V (standard for DDR4)
- Organization: x8 (8-bit prefetch)
- Package: 78-ball FBGA (Fine-pitch Ball Grid Array)
- CAS Latency (CL): 15 cycles (at 2133 MHz)
- Refresh: Auto & self-refresh support
It’s optimized for servers, networking, and consumer electronics, offering improved bandwidth and power efficiency over DDR3. The "-BCWE" suffix denotes its industrial-grade temperature range (0°C to 95°C) and specific timing parameters.
For detailed specs, refer to Samsung’s datasheet.

Equivalent

Equivalent products to the K4A4G165WF-BCWE (4Gb DDR4 SDRAM) include:
- Micron MT40A512M16LY-075:E
- Samsung K4A8G165WC-BCTD
- SK Hynix H5AN4G8NBJR-UHC
These are 4Gb DDR4 chips with similar speed (2666 Mbps), voltage (1.2V), and packaging (FBGA). Verify pin compatibility and timing specs for exact replacements.

Features

The K4A4G165WF-BCWE is a 4Gb (512M x 8) DDR4 SDRAM chip with the following key features:
- Speed: 2133 Mbps (DDR4-2133)
- Voltage: 1.2V (standard DDR4 operating voltage)
- Density & Organization: 4Gb (512M x 8)
- CAS Latency (CL): 15 cycles
- Package: 78-ball FBGA
- Refresh: Auto & self-refresh
- On-Die Termination (ODT): Supported
- Burst Length: 8 (BL8) or Burst Chop 4 (BC4)
- Operating Temp: Commercial/Industrial range (varies by suffix)
This chip is commonly used in servers, networking, and embedded systems requiring low-power, high-speed memory.

Pinout

The K4A4G165WF-BCWE is a 4Gb (512M x 8) DDR4 SDRAM chip from Samsung.
- Pin Count: 96-ball FBGA (Fine-pitch Ball Grid Array).
- Key Functions:
- Voltage: Operates at 1.2V (VDD/VDDQ).
- Speed: Supports DDR4-2400/2666 speeds.
- Organization: 8-bit I/O, 16 internal banks.
- Features: On-die termination (ODT), programmable CAS latency, and auto-refresh.
Used in servers, PCs, and high-speed memory modules.

Package

The K4A4G165WF-BCWE is a DDR4 SDRAM chip in a 78-ball FBGA (Fine-Pitch Ball Grid Array) package. It has a x16 configuration, operates at 1.2V, and offers 4Gb (512MB) capacity. The package dimensions are 9mm x 14mm. This type is commonly used in memory modules for servers, PCs, and embedded systems.

Frequently Asked Questions


Q: What is the memory format and density of this Samsung K4A4G165WF-BCWE?
A: It is a DDR4 SDRAM with a density of 4Gbit, suitable for high-performance computing and embedded applications.


Q: What is the operating clock frequency and voltage supply?
A: It supports a 1.6GHz clock frequency and requires a standard 1.2V supply voltage, ensuring low-power operation.


Q: What is the temperature range for reliable operation?
A: The commercial temperature range is 0℃ to +85℃, making it ideal for industrial and consumer electronics.


Q: What package type does this DDR4 component use?
A: It comes in an FBGA-96 package, enabling compact PCB design and high-speed signal integrity.


Q: Can this memory be used for high-speed data processing?
A: Yes, with a 1.6GHz clock, it delivers high bandwidth for tasks like networking, servers, and DDR4-based modules.


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