K4A4G165WF-BIWE

K4A4G165WF-BIWE is a type of DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random-Access Memory) developed by Samsung. It is designed for high-performance applications, commonly used in laptops, desktops, and servers. The module typically features a capacity of 4GB and operates at a voltage of 1.2V, making it power-efficient. With a data rate of 2400 MT/s (million transfers per second), it provides improved bandwidth compared to previous DDR generations.
Key specifications include a 64-bit data width and a 288-pin configuration, ensuring compatibility with standard DDR4 slots. Additionally, K4A4G165WF-BIWE supports various latency options, enhancing performance for demanding tasks such as gaming, content creation, and data processing. Overall, this memory module is designed to deliver reliable performance and efficiency, catering to the needs of modern computing environments.

The K4A4G165WF-BIWE chip, a 4GB DDR4 SDRAM, is equivalent to products like Samsung K4A4G165WF-BIHB and similar DDR4 memory chips from other manufacturers such as Micron, Hynix, and Kingston, provided they meet the same specifications (DDR4, speed, voltage, and capacity). Always verify compatibility with the specific device or motherboard to ensure proper functionality.

The K4A4G165WF-BIWE is a high-performance DRAM memory chip from Samsung, featuring the following key specifications:
1. Type: DDR4 SDRAM
2. Density: 4GB
3. Speed: Operates at 2400 MT/s (Mega Transfers per second)
4. Configuration: 512Mx8 bits
5. Voltage: Low voltage operation at 1.2V
6. Organization: 16 banks, with a data rate that supports high bandwidth for improved performance in computing applications.
7. Packaging: Typically available in a compact 78-ball FBGA (Fine Ball Grid Array) package, facilitating integration into various devices.
8. Applications: Suitable for use in laptops, desktops, and other consumer electronics requiring efficient and reliable memory solutions.
Overall, the K4A4G165WF-BIWE offers a balance of performance, efficiency, and capacity, making it a popular choice for modern computing needs.

The K4A4G165WF-BIWE is a DDR4 SDRAM memory chip produced by Samsung. It has a pin count of 78 pins, organized in a 6.0mm x 8.0mm BGA (Ball Grid Array) package.
Functionally, this memory chip operates at a voltage of 1.2V and supports data rates up to 2400 MT/s. It features a 4Gb capacity organized in a x16 configuration, making it suitable for applications requiring high-speed memory, such as in computers and other electronic devices. The chip is designed for low power consumption, which is essential for portable devices and contributes to overall system efficiency.
In summary, the K4A4G165WF-BIWE is a compact, efficient DDR4 memory solution with a 78-pin layout, delivering high performance for a variety of applications.

The K4A4G165WF-BIWE is manufactured by Samsung Electronics, a South Korean multinational electronics company. Samsung is one of the largest producers of semiconductors in the world, specializing in various electronic components, including memory chips, display panels, and integrated circuits. The company is part of the larger Samsung Group, which operates in diverse sectors such as consumer electronics, telecommunications, and digital media.
Samsung Electronics is known for its innovation and leadership in technology, particularly in the fields of memory storage (DRAM, NAND flash), mobile devices, and home appliances. The K4A4G165WF-BIWE is a type of DRAM (Dynamic Random Access Memory) chip, commonly used in consumer electronics, computers, and other digital devices. Samsung’s commitment to research and development ensures that it stays at the forefront of the semiconductor industry, providing high-performance and reliable products.

The K4A4G165WF-BIWE is a 4GB DDR4 DRAM memory module primarily used in consumer electronics and computing applications. Its application areas include smartphones, tablets, laptops, and desktop computers, where it enhances performance and multitasking capabilities. Additionally, it is suitable for embedded systems, gaming consoles, and IoT devices, facilitating efficient data processing and storage. The chip's low power consumption makes it advantageous for battery-operated devices, while its high-speed interface supports demanding applications like graphics processing and data-intensive tasks.

The K4A4G165WF-BIWE is a DRAM memory chip packaged in a 78-ball TFBGA (Thin Fine Ball Grid Array) format. This packaging type is designed for efficient thermal management and space-saving applications in electronic devices.