K4A8G165WG-BCWE

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K4A8G165WG-BCWE

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8Gbit 1.2V 3.2GHz DDR4 SDRAM BGA-96 Memory (ICs) RoHS

  • FabricanteSamsung

  • Peça do Fabricante #K4A8G165WG-BCWE

  • Em Estoque11917

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Especificações

Atributo Valor
Packaging BGA-96
Clock Frequency 3.2GHz
Supply Current 42mA
Memory Format DDR4 SDRAM
Memory Size 8Gbit
Operating Temperature 0℃~+85℃
Refresh Current 20mA
Voltage - Supply 1.2V

Visão Geral

Equivalent

The K4A8G165WG-BCWE is a 8Gb DDR4 SDRAM chip from Samsung. Equivalent alternatives include:
- Micron: MT40A1G8WE-075E (8Gb DDR4)
- SK Hynix: H5AN8G6NDJR-UHC (8Gb DDR4)
- Nanya: NT6AN8T6WBJ1B1 (8Gb DDR4)
These chips offer similar specs (speed, density, voltage) and are drop-in replacements in many applications. Always verify pin compatibility and timing parameters for your design.

Features

The K4A8G165WG-BCWE is a DDR4 SDRAM chip with the following key features:
- Capacity: 8Gb (1GB)
- Organization: 512M x 16
- Speed: 2666 Mbps (PC4-21300)
- Voltage: 1.2V (Low Power)
- Package: 96-ball FBGA
- Timings: CL19 (tCAS-tRCD-tRP-tRAS: 19-19-19-43)
- On-Die Termination (ODT): Supported
- Refresh: Auto & Self-Refresh
- Operating Temp: Commercial (0°C to 95°C)
- Manufacturer: Samsung
Designed for high-speed, low-power applications like servers, networking, and embedded systems.

Pinout

The K4A8G165WG-BCWE is a 16Gb (2GB) DDR4 SDRAM chip from Samsung.
- Pin Count: 96-ball FBGA (Fine-pitch Ball Grid Array).
- Key Functions:
- 16Gb capacity (organized as 2G x 8).
- DDR4-3200 speed (up to 3200 Mbps/pin).
- 1.2V operating voltage (VDD/VDDQ).
- On-die termination (ODT) for signal integrity.
- Auto-refresh & self-refresh modes for power efficiency.
- CAS Latency (CL) programmable for timing flexibility.
Used in servers, high-performance computing, and enterprise storage due to its speed and reliability.

Application

The K4A8G165WG-BCWE is a DDR4 SDRAM chip from Samsung, primarily used in:
- Computing systems (servers, workstations, desktops)
- Data centers & cloud storage (high-speed memory for servers)
- Networking equipment (routers, switches)
- Embedded systems (industrial PCs, automation)
- Consumer electronics (gaming consoles, high-end laptops)
It offers 8Gb density, 2666 Mbps speed, and low power consumption, making it suitable for high-performance, energy-efficient applications.

Frequently Asked Questions


Q: What memory format and density does the K4A8G165WG-BCWE support?
A: It is a DDR4 SDRAM with a memory size of 8Gbit, suitable for high-bandwidth applications.


Q: What is the maximum clock frequency and voltage requirement?
A: It operates at a 3.2GHz clock frequency with a 1.2V supply voltage, supporting high-speed data transfer.


Q: What are the temperature and current specifications?
A: Operating temp range is 0℃ to +85℃, with a supply current of 42mA and a refresh current of 20mA.


Q: What package type is this component available in?
A: It comes in a BGA-96 (Ball Grid Array) package, ideal for space-constrained designs.


Q: Is this component suitable for industrial or high-reliability designs?
A: Yes, with a commercial temp range (0°C to +85°C) and low power consumption, it fits standard computing and networking systems.


Q: How does the refresh current impact power design?
A: The 20mA refresh current is optimized for DDR4 efficiency, requiring minimal power during self-refresh modes.


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