K4B2G0846F-BYMA

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K4B2G0846F-BYMA

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1.35V 2Gbit 256Mx8 DDR3 FBGA-78 Memory (ICs) RoHS

  • FabricanteSamsung

  • Peça do Fabricante #K4B2G0846F-BYMA

  • Em Estoque24404

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Especificações

Atributo Valor
Packaging FBGA-78
Interface DDR3
MemoryFormat 256Mx8
MemorySize 2Gbit
Operatingtemperature 0℃~+85℃
Voltage-Supply 1.35V

Visão Geral

Description

K4B2G0846F-BYMA is a model of DRAM (Dynamic Random-Access Memory) chip produced by Samsung. It's part of the LPDDR3 (Low Power Double Data Rate 3) category, which is designed specifically for mobile and portable devices, offering a balance between high performance and low power consumption. This particular model is known for its efficient performance, making it suitable for smartphones, tablets, and other portable electronics that require fast data processing while maintaining energy efficiency.
The K4B2G0846F-BYMA typically offers several features like lower voltage operation compared to its predecessors, improved data transfer rates, and enhanced bandwidth, which cater to the demands of modern computing and multimedia applications. As part of the LPDDR3 family, it supports advanced power-saving modes and has a smaller physical footprint, which is crucial for mobile device manufacturers looking to optimize space without sacrificing performance. Overall, the K4B2G0846F-BYMA is an integral component for devices needing efficient memory solutions.

Equivalent

The K4B2G0846F-BYMA is a 2Gb DDR3 SDRAM chip by Samsung. Equivalent products would include:
1. Hynix H5TQ2G83CFR - DDR3 2Gb
2. Micron MT41J128M16 - DDR3 2Gb
3. Nanya NT5CB128M16 - DDR3 2Gb
4. Elpida EDJ2116CBBG - DDR3 2Gb
5. Kingston equivalent using similar specifications
These products offer similar memory capacity and technology standards. Always verify specific package types and speed requirements for compatibility.

Features

The K4B2G0846F-BYMA is a DDR3 SDRAM chip manufactured by Samsung. It has the following key features:
1. Capacity: 2 Gb (Gigabit).
2. Organization: The chip is organized as 256M x 8 bits.
3. Speed: It supports a data rate of up to 1600 Mbps (megabits per second).
4. Voltage: Operates at a voltage of 1.5V.
5. Package: Available in a standard FBGA (Fine Ball Grid Array) package.
6. Temperature Range: Designed to function in a standard operating temperature range suitable for most consumer electronics.
7. Compatibility: Compliant with the JEDEC standard for DDR3 memory.
8. Low Power: Includes features for power optimization, making it suitable for portable and low-power devices.
9. Applications: Typically used in computers, laptops, and other devices requiring high-speed and reliable memory.
These features make the K4B2G0846F-BYMA a versatile memory chip suitable for a wide range of applications in the computing and electronics industry.

Pinout

The K4B2G0846F-BYMA is a 2Gb DDR3 SDRAM memory chip manufactured by Samsung. It typically comes in a 78-ball FBGA (Fine-Pitch Ball Grid Array) package. The pin count for this package is 78.
The function of the K4B2G0846F-BYMA is to provide volatile random access memory for electronic devices, enabling temporary data storage and retrieval. This DDR3 (Double Data Rate Type 3) SDRAM chip offers high-speed data transfer rates and efficient power consumption, making it ideal for various applications such as computers, servers, and other digital electronics requiring fast and reliable memory performance. It supports features like on-die termination, dynamic on-chip thermal sensor, and programmable burst lengths for better performance and versatility.

Manufacturer

The K4B2G0846F-BYMA is a DRAM chip manufactured by Samsung Electronics. Samsung Electronics is a South Korean multinational company and a major player in the global electronics industry. It is a subsidiary of the Samsung Group and one of the world's largest manufacturers of consumer electronics and semiconductors. Samsung is involved in a wide range of products and services, including mobile phones, televisions, home appliances, memory chips, and display panels. The company has a strong presence in the semiconductor market, producing various types of memory products such as DRAM, NAND flash, and solid-state drives (SSDs). Samsung is known for its innovation and technological advancements, making it a key supplier of memory solutions to a wide array of industries, from consumer electronics to data centers and enterprise computing.

Application

The K4B2G0846F-BYMA is a 2Gb DDR3 SDRAM memory chip used in various electronic applications. It is commonly deployed in computing and consumer electronics, including laptops, desktops, and servers, where it supports data processing and temporary data storage. Additionally, it is utilized in networking equipment, such as routers and switches, as well as in embedded systems found in industrial applications. Its compact size and efficient performance make it suitable for devices requiring reliable, high-speed memory solutions.

Package

The K4B2G0846F-BYMA is a DRAM chip from Samsung, and it typically comes in a Fine-Pitch Ball Grid Array (FBGA) package. This packaging is used for memory chips to provide a compact form factor with efficient heat dissipation and electrical performance.

Frequently Asked Questions


Q: What is the memory density and organization of the K4B2G0846F-BYMA?
A: This is a 2Gbit DDR3 SDRAM organized as 256M x 8, suitable for applications requiring 2Gb density.


Q: What is the operating voltage range for this component?
A: It operates at a low voltage of 1.35V, compliant with DDR3L standards, reducing power consumption.


Q: What is the temperature range for reliable operation?
A: It supports an operating temperature range from 0°C to +85°C, covering commercial and industrial use cases.


Q: What package type does the K4B2G0846F-BYMA use?
A: It is packaged in an FBGA-78 (Fine-Pitch Ball Grid Array) form factor, ideal for compact PCB layouts.


Q: Is this component compatible with standard DDR3 interfaces?
A: Yes, it uses a standard DDR3 memory interface, ensuring broad compatibility with DDR3 memory controllers.


Q: What typical applications suit this memory IC?
A: It is ideal for embedded systems, networking equipment, and computing devices requiring low-power 2Gb DDR3 memory.


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