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K4B2G1646C-HCH9
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FabricanteJLCPCB Assembly
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Peça do Fabricante #K4B2G1646C-HCH9
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Especificações
| Atributo | Valor |
| Manufacturer | JLCPCB Assembly |
| Package / Case | BGA-96_L13.5-W7.5-P0.80 |
Visão Geral
Description
The K4B2G1646C-HCH9 is a 2Gb (256MB) DDR3 SDRAM chip from Samsung, designed for high-speed, low-power applications. Key features:
- Capacity: 2Gb (256M x 8-bit)
- Speed: 1600 Mbps/pin (DDR3-1600)
- Voltage: 1.35V (Low Power, DDR3L-compatible)
- Organization: 8 banks, 16-bit prefetch
- Package: 78-ball FBGA (Fine-pitch Ball Grid Array)
- Applications: Consumer electronics, networking, embedded systems
It supports auto-refresh, self-refresh, and on-die termination (ODT) for signal integrity. The "-HCH9" suffix denotes speed grade and revision.
Key Benefits:
✔ Low power consumption (DDR3L)
✔ High bandwidth (PC3-12800)
✔ Compact FBGA packaging
Ideal for space-constrained, power-sensitive designs requiring reliable DDR3 performance.
- Capacity: 2Gb (256M x 8-bit)
- Speed: 1600 Mbps/pin (DDR3-1600)
- Voltage: 1.35V (Low Power, DDR3L-compatible)
- Organization: 8 banks, 16-bit prefetch
- Package: 78-ball FBGA (Fine-pitch Ball Grid Array)
- Applications: Consumer electronics, networking, embedded systems
It supports auto-refresh, self-refresh, and on-die termination (ODT) for signal integrity. The "-HCH9" suffix denotes speed grade and revision.
Key Benefits:
✔ Low power consumption (DDR3L)
✔ High bandwidth (PC3-12800)
✔ Compact FBGA packaging
Ideal for space-constrained, power-sensitive designs requiring reliable DDR3 performance.
Equivalent
The K4B2G1646C-HCH9 is a 2Gb DDR3 SDRAM chip from Samsung. Equivalent products include:
- Hynix: H5TC2G63FFR-PBA
- Micron: MT41K256M16TW-107:P
- Nanya: NT5CB256M16DP-DI
These chips offer similar specifications (2Gb, DDR3, 16-bit bus). Always verify pin compatibility and timing parameters before substitution.
- Hynix: H5TC2G63FFR-PBA
- Micron: MT41K256M16TW-107:P
- Nanya: NT5CB256M16DP-DI
These chips offer similar specifications (2Gb, DDR3, 16-bit bus). Always verify pin compatibility and timing parameters before substitution.
Features
The K4B2G1646C-HCH9 is a 2Gb (256M x 8) DDR3L SDRAM chip from Samsung. Key features:
- Density & Organization: 2 Gigabit (256M × 8)
- Voltage: 1.35V (DDR3L), compatible with 1.5V
- Speed: -HCH9 suffix denotes 1600 Mbps data rate (PC3L-12800)
- Timings: CL=11, tRCD=11, tRP=11 (cycles)
- Package: 78-ball FBGA
- Refresh: 64ms refresh interval (8K cycles)
- Low Power: Reduced standby current vs. standard DDR3
- On-Die Termination (ODT): Supports signal integrity
Ideal for low-power, high-speed applications like embedded systems, networking, and mobile devices.
- Density & Organization: 2 Gigabit (256M × 8)
- Voltage: 1.35V (DDR3L), compatible with 1.5V
- Speed: -HCH9 suffix denotes 1600 Mbps data rate (PC3L-12800)
- Timings: CL=11, tRCD=11, tRP=11 (cycles)
- Package: 78-ball FBGA
- Refresh: 64ms refresh interval (8K cycles)
- Low Power: Reduced standby current vs. standard DDR3
- On-Die Termination (ODT): Supports signal integrity
Ideal for low-power, high-speed applications like embedded systems, networking, and mobile devices.
Pinout
The K4B2G1646C-HCH9 is a 2Gb DDR3 SDRAM chip with a 96-ball FBGA package.
Key Functions:
- 16-bit data bus (DQ0-DQ15)
- 13-bit row address (A0-A12)
- 10-bit column address (A0-A9)
- Bank addressing (BA0-BA2, 8 banks)
- Control signals (RAS#, CAS#, WE#, CS#, CKE, ODT)
- Clock inputs (CK, CK#)
- Differential data strobes (DQS, DQS#)
It operates at 1.5V and supports DDR3-800/1066/1333 speeds. The pin count and functions are standard for DDR3 memory chips, making it suitable for embedded and computing applications.
Key Functions:
- 16-bit data bus (DQ0-DQ15)
- 13-bit row address (A0-A12)
- 10-bit column address (A0-A9)
- Bank addressing (BA0-BA2, 8 banks)
- Control signals (RAS#, CAS#, WE#, CS#, CKE, ODT)
- Clock inputs (CK, CK#)
- Differential data strobes (DQS, DQS#)
It operates at 1.5V and supports DDR3-800/1066/1333 speeds. The pin count and functions are standard for DDR3 memory chips, making it suitable for embedded and computing applications.
Package
The K4B2G1646C-HCH9 is a DDR3 SDRAM chip in a 78-ball FBGA (Fine-pitch Ball Grid Array) package. It has a x16 organization and operates at 1.5V. The package dimensions are 10mm x 14mm x 1.2mm, suitable for high-density memory applications. The "HCH9" suffix indicates its speed grade and industrial temperature range (-40°C to +95°C).
