K4B2G1646F-BFMA

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K4B2G1646F-BFMA

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FBGA-96 Memory (ICs) RoHS

  • FabricanteSamsung

  • Peça do Fabricante #K4B2G1646F-BFMA

  • Em Estoque3957

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Especificações

Atributo Valor
Packaging FBGA-96

Visão Geral

Description

The K4B2G1646F-BFMA is a 2GB DDR3 SDRAM (Synchronous Dynamic Random Access Memory) chip developed by Samsung. It operates at a voltage of 1.5V and is designed for high-performance applications such as laptops, desktops, and other electronic devices. The memory chip features a 64-bit data bus and is organized as 256M x 16 bits, allowing for efficient data transfer and processing.
This DDR3 memory supports data rates of up to 1600 MT/s (megatransfers per second) and is characterized by its low power consumption compared to earlier DDR generations. The BFMA variant indicates packaging and temperature specifications, making it suitable for a range of operating conditions.
Overall, the K4B2G1646F-BFMA is an essential component for modern computing systems, enhancing speed and performance in various applications.

Equivalent

The K4B2G1646F-BFMA is a 2GB DDR3 SDRAM chip. Equivalent products include:
1. Hynix H5TQ2G83AFR
2. Micron MT8JSF12864AZ-1G1
3. Samsung K4B2G1646F-BCHC
4. Kingston KVR16S11/2
Ensure compatibility with your specific application regarding timing, voltage, and package type before substitution.

Features

The K4B2G1646F-BFMA is a 2GB DDR3 SDRAM memory chip designed for various applications, including laptops and other consumer electronics. Key features include:
1. Memory Type: DDR3 SDRAM, offering improved performance over previous DDR generations.
2. Density: 2GB capacity, suitable for enhancing system memory.
3. Data Rate: Operates at 1600 MT/s (megatransfers per second), which enhances data transfer speeds.
4. Organization: Configured as 128M x 64, ideal for efficient data handling.
5. Voltage: Operates at 1.5V, ensuring lower power consumption compared to earlier DDR versions.
6. Package: Available in a FBGA (Fine Ball Grid Array) package, facilitating compact design and integration.
7. Temperature Range: Typical operating temperature range from -40°C to 85°C, making it versatile for various environments.
Overall, this memory chip is designed for efficiency and performance, catering to modern computing needs.

Pinout

The K4B2G1646F-BFMA is a 2GB DDR3 SDRAM memory chip with a pin count of 78. Its primary function is to serve as DRAM (Dynamic Random Access Memory) in various electronic devices, providing fast and efficient data storage and retrieval for processing tasks. The chip operates at a voltage of 1.5V and supports a data rate of up to 1600 MT/s (megatransfers per second), making it suitable for applications in computers, servers, and other electronic equipment requiring high-performance memory solutions.

Manufacturer

The K4B2G1646F-BFMA is a product manufactured by Samsung Electronics, a South Korean multinational conglomerate. Samsung Electronics is a leading global technology company, primarily known for its semiconductor division, which produces a variety of memory products, including DRAM, NAND flash, and related components. The K4B2G1646F-BFMA specifically is a mobile DRAM (Dynamic Random Access Memory) chip, utilized in smartphones, tablets, and other mobile devices to enhance performance and efficiency.
Founded in 1969, Samsung Electronics operates as a subsidiary of the Samsung Group and is recognized for its innovation in consumer electronics, telecommunications, and digital media technologies. The company invests heavily in research and development to maintain its competitive edge and has a significant market presence in the global semiconductor industry. It plays a crucial role in the supply chain for various electronic devices, catering to a wide range of industries.

Application

The K4B2G1646F-BFMA is a 2GB DDR3 SDRAM memory chip commonly used in various applications, including consumer electronics like smartphones, tablets, and laptops. It is also utilized in networking equipment, gaming consoles, and embedded systems for automotive and industrial applications. Its high-speed performance and energy efficiency make it suitable for applications requiring fast data processing and storage, such as in servers and workstations. Additionally, the chip can be found in IoT devices, enhancing their memory capabilities for improved functionality.

Package

The K4B2G1646F-BFMA is a DDR3 SDRAM memory chip packaged in a 78-ball Fine-Pitch Ball Grid Array (FBGA) format.

Frequently Asked Questions


Q: What is the package type and pin count for the K4B2G1646F-BFMA?
A: It uses a FBGA-96 package, which is a Fine-pitch Ball Grid Array with 96 balls, suitable for high-density mounting.


Q: Is this component a DDR3 or DDR4 memory chip?
A: Based on the part number prefix "K4B2G", it is a Samsung DDR3 SDRAM, specifically a 2Gb (256M x 8) device.


Q: What speed grade does the "BFMA" suffix indicate?
A: The "BFMA" suffix typically indicates a DDR3-1600 (PC3-12800) speed grade with a CAS latency of 11 (CL11), operating at 1.5V.


Q: Can this memory IC be used in industrial temperature applications?
A: The provided parameters do not specify the operating temperature range. Please refer to the official Samsung datasheet to confirm if it supports commercial or industrial temperature grades.


Q: What is the typical application for the K4B2G1646F-BFMA?
A: It is commonly used in servers, networking equipment, and embedded systems requiring high reliability and standard DDR3 memory performance.


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