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K4B4G0846E-BCNB
+Lista de Materiais4Gbit 1.5V DDR3 SDRAM FBGA-78 Memory (ICs) RoHS
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FabricanteSamsung
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Peça do Fabricante #K4B4G0846E-BCNB
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Em Estoque22444
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Especificações
| Atributo | Valor |
| Packaging | FBGA-78 |
| MemoryFormat | DDR3 SDRAM |
| MemorySize | 4Gbit |
| Operatingtemperature | 0℃~+85℃ |
| Voltage-Supply | 1.5V |
Visão Geral
Description
The syntax of the model number indicates various specifications such as density, data rate, and form factor. For instance, "K4B4G" often denotes the capacity and chip organization, while "0846E" might refer to specific features or revisions. The suffix "BCNB" could signify packaging type or specific performance characteristics.
DDR4 RAM provides improved speed and efficiency compared to its predecessors, enhancing overall system performance by increasing bandwidth and reducing power consumption. This makes it suitable for applications requiring high memory throughput, such as gaming, video editing, and database management.
For detailed specifications, consulting the manufacturer's datasheet or technical documentation would provide precise information regarding features, compatibility, and performance metrics.
Equivalent
1. Hynix (SK Hynix) H5TQ4G83AFR
2. Micron MT41K256M8DA
3. Nanya NT5CB256M8GN
4. Elpida/Micron EDJ4104BASE-G
These chips offer similar specifications suitable for comparable applications in terms of capacity, speed, and form factor. Always check specific datasheets for detailed compatibility.
Features
1. Memory Type: DDR3 SDRAM.
2. Density: Typically 4Gb (Gigabits).
3. Organization: 512M x 8 bit configuration.
4. Package: FBGA (Fine-pitch Ball Grid Array).
5. Speed: Can operate at various frequencies, up to 1600 Mbps per pin.
6. Voltage: Operates at a standard 1.5V, with potential low-voltage options at 1.35V.
7. Data Rate: Double Data Rate (DDR), which allows data transfer on both the rising and falling edges of the clock signal.
8. Temperature Range: Designed to work in standard commercial temperature ranges.
9. Features: Supports features like on-die termination (ODT), auto-refresh, and self-refresh.
These features make it suitable for a variety of applications, including PCs, laptops, and servers, where performance and power efficiency are important.
Pinout
The primary function of the K4B4G0846E-BCNB is to serve as volatile memory, which provides temporary storage for data that the CPU needs to access quickly. DDR3 SDRAM offers improvements over its predecessors, DDR2, by providing higher transfer rates and greater bandwidth, which makes it suitable for a wide range of applications including PCs, laptops, servers, and networking equipment.
The chip operates with a power supply of 1.5V and supports various features such as programmable CAS latency, prefetch buffer, and on-die termination, which help optimize performance and power efficiency. The pin count and layout are specific to the package type and are essential for integrating the chip onto a motherboard or memory module. For detailed pin configuration, it is best to refer to the manufacturer's datasheet.
Manufacturer
Application
Package
Frequently Asked Questions
Q: What is the memory density and type of this Samsung part?
A: It is a 4Gbit DDR3 SDRAM, commonly used for high-speed data processing in computing and networking applications.
Q: What is the operating temperature range for the K4B4G0846E-BCNB?
A: It operates from 0℃ to +85℃, making it suitable for commercial and industrial environments within this range.
Q: What voltage supply does this DDR3 memory require?
A: It requires a standard DDR3 supply voltage of 1.5V, ensuring compatibility with typical DDR3 memory controllers.
Q: What is the physical packaging of this component?
A: It comes in an FBGA-78 package, which is a fine-pitch ball grid array ideal for compact PCB designs.
Q: Is this memory component RoHS compliant?
A: The RoHS status is not specified in the provided parameters; please verify with the manufacturer or supplier for compliance details.