K4B4G0846E-BYMA

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K4B4G0846E-BYMA

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4Gbit 1.35V 933MHz DDR3 SDRAM FBGA-78 Memory (ICs) RoHS

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Especificações

Atributo Valor
Packaging FBGA-78
Clock Frequency 933MHz
Memory Format DDR3 SDRAM
Memory Size 4Gbit
Operating Temperature 0℃~+85℃
Voltage - Supply 1.35V

Visão Geral

Description

K4B4G0846E-BYMA is a model number for a type of DRAM (Dynamic Random-Access Memory) chip produced by Samsung. Specifically, it belongs to the LPDDR4 (Low Power Double Data Rate 4) class of memory, which is commonly used in mobile devices such as smartphones and tablets due to its energy efficiency and high performance.
The "K4B4G0846E" identifies the specific chip configuration and specifications, while "BYMA" often denotes a variant or grade related to performance, power consumption, or packaging specifics. LPDDR4 memory is designed to handle a wide range of tasks efficiently by supporting faster data rates and lower power use compared to its predecessors. This makes it ideal for modern devices that require substantial memory bandwidth while maintaining battery life.
Understanding the specifications and performance characteristics of such memory chips can be crucial for developers and engineers working in hardware design and system optimization. This knowledge can help in selecting appropriate memory components for their devices to ensure optimal performance and efficiency.

Equivalent

The K4B4G0846E-BYMA chip is a DDR3 DRAM module by Samsung. Equivalent products from other manufacturers would be similar DDR3 DRAM chips with comparable specifications such as capacity, speed, and voltage. Look for similar parts from manufacturers like Micron (e.g., MT41K256M16HA), SK Hynix (e.g., H5TQ4G63AFR), and Kingston, which produce compatible DDR3 memory modules. It’s important to verify specific requirements, such as pin configuration and timings, to ensure compatibility with your system.

Features

The K4B4G0846E-BYMA is a DRAM chip from Samsung's DDR3 SDRAM family, commonly used in various electronic devices for temporary data storage and quick data access. Here are some key features:
1. Type: DDR3 SDRAM (Double Data Rate 3 Synchronous Dynamic Random-Access Memory).
2. Capacity: 4Gb (Gigabits).
3. Organization: 512M x 8 (512 Megabits x 8 banks).
4. Voltage: Typically operates at 1.5V.
5. Speed: May support data rates up to 1600 MT/s (Mega Transfers per second), depending on specific model configuration.
6. Package: Often available in FBGA (Fine-Pitch Ball Grid Array) packaging.
7. Temperature Range: Suitable for a range of environmental conditions, often including commercial and industrial temperatures.
8. Applications: Used in computing devices, consumer electronics, and networking equipment for efficient data handling and multitasking capabilities.
9. Power Efficiency: Incorporates advanced power-saving features, beneficial for mobile and low-power applications.
These features make it versatile for use in enhancing device performance through fast data retrieval and storage.

Pinout

The K4B4G0846E-BYMA is a DDR3 SDRAM chip manufactured by Samsung. It typically has a 78-ball FBGA (Fine-Pitch Ball Grid Array) package. The key functions of this chip include providing high-speed DRAM storage, supporting a wide range of computing applications. It is organized as 512M x 8 bits and offers features like a high data transfer rate, low power consumption, and efficient performance due to its double data rate architecture. It is commonly used in applications that require fast and reliable memory, such as in computers, servers, and other digital devices.

Manufacturer

The K4B4G0846E-BYMA is a memory chip manufactured by Samsung Electronics. Samsung Electronics is a multinational conglomerate company based in South Korea. It is a major player in the global electronics industry and is known for its wide range of products, including semiconductors, consumer electronics, home appliances, and telecommunications equipment. Samsung is one of the largest manufacturers of memory chips, displays, and smartphones, and it plays a significant role in the technology sector worldwide.

Application

The K4B4G0846E-BYMA is a 4Gb DDR3 SDRAM chip from Samsung, typically used in a variety of electronic devices requiring efficient memory solutions. Its primary applications include:
1. Computing Devices: Utilized in desktops, laptops, and servers for enhancing overall system performance and speed.
2. Embedded Systems: Common in consumer electronics like smart TVs, gaming consoles, and home entertainment systems.
3. Networking Equipment: Applied in routers and switches for improved data processing capabilities.
4. Industrial Automation: Used in machinery and control systems for robust and reliable memory performance.
5. Mobile Devices: May be implemented in tablets and smartphones for efficient multitasking and application support.
These applications benefit from the DDR3's higher bandwidth, lower power consumption, and increased reliability.

Package

The K4B4G0846E-BYMA is a DRAM chip from Samsung, typically used in memory applications. It features a FBGA (Fine-Pitch Ball Grid Array) package, which is a type of surface-mount packaging used for integrated circuits.

Frequently Asked Questions


Q: What is the memory density and data bus width of the K4B4G0846E-BYMA?
A: It has a 4Gbit memory size organized as 512M x 8, making it suitable for 8-bit data interface applications.


Q: What is the operating voltage for this DDR3 SDRAM?
A: It operates at a low voltage of 1.35V, classifying it as DDR3L (low voltage) for reduced power consumption.


Q: What is the maximum clock frequency supported?
A: The device supports a clock frequency of 933MHz, corresponding to a data rate of up to 1866 Mbps per pin.


Q: Is this component suitable for industrial temperature ranges?
A: No, it has an operating temperature range of 0℃ to +85℃, which is commercial grade, not industrial (-40℃ to +85℃).


Q: What package type does the K4B4G0846E-BYMA use?
A: It uses an FBGA-78 package, which is a standard 78-ball fine-pitch ball grid array for DDR3 SDRAM.


Q: Can this memory replace a standard 1.5V DDR3 module?
A: Yes, it is backward compatible with 1.5V DDR3 systems, but optimized for 1.35V DDR3L platforms for better energy efficiency.


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