K4B4G1646D-BFMA

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K4B4G1646D-BFMA

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  • FabricanteSamsung Electro-Mechanics

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Especificações

Atributo Valor
Manufacturer Samsung Electro-Mechanics
Package BGA96

Visão Geral

Equivalent

The K4B4G1646D-BFMA is a 4Gb DDR3 SDRAM chip from Samsung. Equivalent alternatives include:
- Hynix: H5TC4G63AFR-PBA
- Micron: MT41K512M8DA-107 (4Gb, similar specs)
- Nanya: NT5CC256M16DP-DI
These are pin-compatible or functionally similar DDR3 chips. Verify datasheets for exact compatibility in your application.

Pinout

The K4B4G1646D-BFMA is a 4Gb (512M x 8) DDR3 SDRAM chip from Samsung.
- Pin Count: 96-ball FBGA (Fine-pitch Ball Grid Array).
- Key Functions:
- 8-bit data bus (DQ0-DQ7).
- 16 internal banks for efficient memory access.
- DDR3 interface (1.5V operation, up to 1600 Mbps/pin).
- Address/command inputs (A0-A14, BA0-BA2, RAS#, CAS#, WE#, etc.).
- Differential clock inputs (CK, CK#).
- On-Die Termination (ODT) for signal integrity.
Used in consumer electronics, networking, and computing for high-speed, low-power memory.

Application

The K4B4G1646D-BFMA is a 4Gb DDR3 SDRAM chip commonly used in:
1. Computing Systems – Desktops, laptops, and servers.
2. Networking Equipment – Routers, switches, and telecom devices.
3. Embedded Systems – Industrial automation, medical devices.
4. Consumer Electronics – Smart TVs, gaming consoles.
5. Automotive Infotainment – Advanced driver-assistance systems (ADAS).
It provides high-speed, low-power memory for applications requiring reliable data processing and storage.

Package

The K4B4G1646D-BFMA is a DDR3 SDRAM chip in a 78-ball FBGA (Fine-pitch Ball Grid Array) package. It features a compact, surface-mount design suitable for high-density memory applications. The package dimensions are typically 9mm x 9.5mm, with a ball pitch of 0.8mm. This type is commonly used in consumer electronics, networking, and embedded systems.

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