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FabricanteSamsung
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Peça do Fabricante #K4F8E3S4HB-MFCJ
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Especificações
| Atributo | Valor |
| Manufacturer | Samsung |
| Package / Case | FBGA-200 |
Visão Geral
Equivalent
The K4F8E3S4HB-MFCJ is a Samsung DDR4 DRAM chip. Equivalent products include:
- SK Hynix: H5AN8G8NAFR-UHC
- Micron: MT40A1G8SA-075:E
- Nanya: NT6AN8T8SA-75F
These are 8Gb (1GB) DDR4 chips with similar specs (speed, density, voltage). Always verify datasheets for exact compatibility.
- SK Hynix: H5AN8G8NAFR-UHC
- Micron: MT40A1G8SA-075:E
- Nanya: NT6AN8T8SA-75F
These are 8Gb (1GB) DDR4 chips with similar specs (speed, density, voltage). Always verify datasheets for exact compatibility.
Features
The K4F8E3S4HB-MFCJ is a high-performance DDR4 SDRAM module from Samsung, designed for enterprise and data center applications. Key features include:
- Capacity: 8GB (8Gb x8)
- Speed: 3200 Mbps (PC4-25600)
- Voltage: 1.2V (low power)
- Density: 8Gb per die
- Organization: 1G x8
- CAS Latency: 22 (CL22)
- Form Factor: 288-pin DIMM
- Error Correction: Supports ECC (Error-Correcting Code)
- Temperature Range: Commercial (0°C to 95°C)
- Reliability: High-quality components for stable operation in demanding environments.
Ideal for servers, cloud computing, and enterprise storage due to its speed, efficiency, and error-correction capabilities.
- Capacity: 8GB (8Gb x8)
- Speed: 3200 Mbps (PC4-25600)
- Voltage: 1.2V (low power)
- Density: 8Gb per die
- Organization: 1G x8
- CAS Latency: 22 (CL22)
- Form Factor: 288-pin DIMM
- Error Correction: Supports ECC (Error-Correcting Code)
- Temperature Range: Commercial (0°C to 95°C)
- Reliability: High-quality components for stable operation in demanding environments.
Ideal for servers, cloud computing, and enterprise storage due to its speed, efficiency, and error-correction capabilities.
Pinout
The K4F8E3S4HB-MFCJ is a 4Gb (512M x 8) LPDDR3 SDRAM from Samsung.
- Pin Count: 168-ball FBGA (Fine-pitch Ball Grid Array).
- Key Functions:
- Low-power DDR3 (LPDDR3) memory for mobile/embedded applications.
- 8-bit I/O, operating at 1.2V (VDD/VDDQ).
- Supports high-speed data transfer (up to 1866 Mbps).
- Features on-die termination (ODT) and programmable drive strength.
- Bank architecture: 8 banks for efficient memory access.
Used in smartphones, tablets, and IoT devices for compact, power-efficient storage.
- Pin Count: 168-ball FBGA (Fine-pitch Ball Grid Array).
- Key Functions:
- Low-power DDR3 (LPDDR3) memory for mobile/embedded applications.
- 8-bit I/O, operating at 1.2V (VDD/VDDQ).
- Supports high-speed data transfer (up to 1866 Mbps).
- Features on-die termination (ODT) and programmable drive strength.
- Bank architecture: 8 banks for efficient memory access.
Used in smartphones, tablets, and IoT devices for compact, power-efficient storage.
Manufacturer
The K4F8E3S4HB-MFCJ is a memory chip manufactured by Samsung Electronics, a leading South Korean multinational specializing in semiconductors, consumer electronics, and telecommunications. Samsung is one of the world's largest producers of memory chips, including DRAM and NAND flash, known for high-performance and reliability in applications like smartphones, servers, and storage devices. The company is a dominant player in the global semiconductor market.
Application
The K4F8E3S4HB-MFCJ is a high-performance memory chip, likely from Samsung's LPDDR or eMMC series. Its applications include:
- Mobile Devices: Smartphones, tablets for fast data access.
- Embedded Systems: IoT devices, wearables requiring low power.
- Automotive: Infotainment, ADAS for reliable storage.
- Industrial Electronics: Robust operation in harsh environments.
- Consumer Electronics: Smart TVs, drones for efficient memory management.
It balances speed, power efficiency, and durability, making it versatile for compact, high-performance applications.
- Mobile Devices: Smartphones, tablets for fast data access.
- Embedded Systems: IoT devices, wearables requiring low power.
- Automotive: Infotainment, ADAS for reliable storage.
- Industrial Electronics: Robust operation in harsh environments.
- Consumer Electronics: Smart TVs, drones for efficient memory management.
It balances speed, power efficiency, and durability, making it versatile for compact, high-performance applications.
Package
The package type of K4F8E3S4HB-MFCJ is FBGA (Fine-Pitch Ball Grid Array). This package is commonly used for memory chips, offering high density and reliable performance in compact designs. The FBGA format ensures efficient heat dissipation and electrical connectivity, making it suitable for advanced applications. For exact dimensions and pin configuration, refer to the manufacturer's datasheet.
