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KT11P4SA1M35LFG
+Lista de MateriaisSWITCH TACTILE SPST-NO 1VA 32V
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FabricanteC&K
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Peça do Fabricante #KT11P4SA1M35LFG
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Ficha Técnica KT11P4SA1M35LFG DataSheet
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Especificações
| Atributo | Valor |
| Series | KT |
| Part Status | Active |
| Circuit | SPST-NO |
| Switch Function | Off-Mom |
| Contact Rating @ Voltage | 1VA @ 32VAC/DC |
| Actuator Type | Standard |
| Mounting Type | Surface Mount, Right Angle |
| Actuator Orientation | Side Actuated |
| Termination Style | Gull Wing |
| Outline | 7.77mm x 4.38mm |
| Illumination | Non-Illuminated |
| Operating Force | 300gf |
| Ingress Protection | IP57 - Dust Protected, Waterproof |
| Features | Sealed |
| Operating Temperature | -40°C ~ 90°C |
| Base Product Number | KT11P4 |
Visão Geral
Description
If this code pertains to a product, it may represent specifications like size, version, or compatibility features relevant to its application. To fully understand its significance, one would typically need to refer to the manufacturer's documentation or website, where details about the product’s features, uses, and compatibility are outlined.
If you have more information or context regarding KT11P4SA1M35LFG, please provide it for a more targeted response.
Equivalent
Pinout
The pins generally include:
1. Gate (G): Controls the MOSFET operation, turning it on or off.
2. Drain (D): The terminal through which the load current flows when the MOSFET is on.
3. Source (S): The terminal connected to the ground or negative side of the circuit.
For specific applications, it is often used in DC-DC converters, power supplies, and other high-efficiency switching applications. Always refer to the manufacturer's datasheet for precise pin configurations and electrical characteristics.
Manufacturer
Kioxia is known for its innovation in memory technology and aims to deliver high-performance storage solutions to meet the growing demands for data storage in various sectors, particularly as the need for faster, more efficient data processing continues to rise. The company is also actively involved in advancing memory technology through research and development efforts.