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L6388ED
+Lista de MateriaisIC GATE DRVR HALF-BRIDGE 8SO
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FabricanteSTMicroeletrônica
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Peça do Fabricante #L6388ED
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Ficha Técnica L6388ED DataSheet
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Pacote SO-8
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Em Estoque7739
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Especificações
| Atributo | Valor |
| Package | Tube |
| ProductStatus | Active |
| DrivenConfiguration | Half-Bridge |
| ChannelType | Independent |
| NumberofDrivers | 2 |
| GateType | IGBT, N-Channel MOSFET |
| Voltage-Supply | 17V (Max) |
| LogicVoltage-VILVIH | 1.1V, 1.8V |
| Current-PeakOutput(SourceSink) | 400mA, 650mA |
| InputType | Non-Inverting |
| HighSideVoltage-Max(Bootstrap) | 600 V |
| Rise/FallTime(Typ) | 70ns, 40ns |
| OperatingTemperature | -40°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | 8-SOIC (0.154, 3.90mm Width) |
Visão Geral
Description
Key features of the L6388ED include:
1. Bootstrap Structure: This enables the high-side driving capability necessary for driving the gate of a high-side MOSFET or IGBT.
2. Under-Voltage Lockout (UVLO): Protects the circuit by shutting down the gate driver when supply voltage drops below a certain threshold.
3. Integrated Dead-Time Control: Ensures that there is a non-overlapping period between the high-side and low-side switches, preventing short-circuits.
4. CMOS/TTL Compatible Inputs: Provides flexibility in interfacing with microcontrollers and DSPs.
5. High Immunity to dV/dt Transients: Ensures reliable operation in high-noise environments typical of power electronics applications.
The L6388ED is ideal for applications requiring efficient and reliable switching with precise control, such as electric motor drives, power inverters, and SMPS (Switched-Mode Power Supplies).
Equivalent
Features
1. High-Voltage Capability: It supports up to 600V, making it suitable for high-voltage applications.
2. Driver Outputs: Provides high- and low-side gate drivers, ideal for driving N-channel MOSFETs or IGBTs.
3. Bootstrap Operation: Includes a built-in bootstrap diode, facilitating high-side drive.
4. Low Quiescent Current: Designed for efficiency with reduced power consumption when idle.
5. Protection Features: Includes undervoltage lockout for both high-side and low-side sections, enhancing safety.
6. Dead-Time Control: Offers fixed dead-time protection to prevent shoot-through in the half-bridge circuit.
7. Fast Switching: Capable of fast switching speeds, improving system performance.
8. Package: Available in SO-8 package, which is compact and suitable for space-constrained designs.
These features make the L6388ED a versatile and reliable choice for applications like motor drives, power supplies, and other systems requiring efficient high-voltage switching.
Pinout
1. VCC: Supply voltage for the low-side section of the driver.
2. OUT: Output pin for the high-side gate drive.
3. VS: High-side driver floating supply return, typically connected to the source of the high-side MOSFET.
4. BOOT: Bootstrap pin needed for the high-side driver supply.
5. HIN: Logic input for controlling the high-side driver.
6. LIN: Logic input for controlling the low-side driver.
7. COM: Common ground pin for the device.
8. VBOOT: Provides the bootstrap voltage for the floating high-side driver.
The L6388ED is designed to drive N-channel MOSFETs or IGBTs in half-bridge configurations, offering features like high-voltage capability and logic-level inputs.