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LM5105SD
+Lista de MateriaisIC GATE DRVR HALF-BRIDGE 10WSON
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FabricanteTexas Instruments
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Peça do Fabricante #LM5105SD
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Pacote WDFN-10
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Em Estoque7354
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Especificações
| Atributo | Valor |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Part Status | Obsolete |
| Driven Configuration | Half-Bridge |
| Channel Type | Synchronous |
| Number of Drivers | 2 |
| Gate Type | N-Channel MOSFET |
| Voltage - Supply | 8V ~ 14V |
| Logic Voltage - VILVIH | 0.8V, 2.2V |
| Current - Peak Output(Source Sink) | 1.8A, 1.8A |
| Input Type | Non-Inverting |
| High Side Voltage - Max(Bootstrap) | 118 V |
| Rise / Fall Time(Typ) | 15ns, 15ns |
| Operating Temperature | -40°C ~ 125°C (TJ) |
| Mounting Type | Surface Mount |
Visão Geral
Description
Key features include:
1. Bootstrap Operation: Supports high-side operation using a bootstrap capacitor.
2. Fast Propagation Delays: Ensures quick response times, typically around 27ns.
3. Undervoltage Lockout (UVLO): Protects the circuit by disabling outputs when supply voltage is too low.
4. Level Shifting: Provides level shifting from the logic input to the gate driver output.
5. Interlock Feature: Prevents simultaneous conduction of both high-side and low-side MOSFETs.
6. Thermal Protection: Guards against excessive temperature operation.
The compact package and robust design make it suitable for a variety of applications, including motor drives, power converters, and high-frequency DC-DC converters.
Equivalent
1. IR2110 by Infineon Technologies
2. FAN7382 by ON Semiconductor
3. MIC4422 by Microchip Technology
4. FAN7390 by Fairchild Semiconductor
When considering an equivalent, ensure compatibility in terms of voltage, current ratings, and package type for your specific application requirements.
Features
1. Input Voltage Range: It supports a wide input voltage range, making it suitable for various applications.
2. Bootstrap Operation: The device includes a bootstrap diode, facilitating high-side drive capability through a bootstrap capacitor.
3. High-Side and Low-Side Drive: It provides separate high-side and low-side drivers, supporting independent control of both MOSFETs.
4. Low Propagation Delay: The driver offers fast propagation delay, enhancing the efficiency and response time of the power system.
5. Dead-Time Control: Adjustable dead-time control is available to prevent shoot-through and ensure reliable operation.
6. Under-Voltage Lockout (UVLO): This feature ensures the driver operates only when the supply voltage is above a certain threshold, protecting the circuit.
7. Thermal Shutdown: Over-temperature protection is included to prevent damage under excessive heat conditions.
8. Package: The LM5105SD is available in a compact surface-mount package, suitable for space-constrained designs.
These features make the LM5105SD ideal for applications like motor drives, power supplies, and DC-DC converters.
Pinout
The LM5105SD comes in a 10-pin WSON (DSD) package. Here is a brief overview of its pin functions:
1. VDD: Supply voltage for the low-side driver.
2. HB: High-side bootstrapped supply voltage.
3. HO: High-side gate drive output.
4. HS: High-side source connection, used for the bootstrap capacitor.
5. HI: High-side driver input.
6. LI: Low-side driver input.
7. LO: Low-side gate drive output.
8. VSS: Ground reference.
9. NC: No connection, not used.
10. DIS: Disable pin, used to disable the driver outputs.
The LM5105SD is designed to provide efficient and reliable driving of MOSFETs, ensuring fast switching and low power dissipation in power conversion applications.
Manufacturer
Application
1. Switching Power Supplies: Facilitates efficient power conversion in AC/DC and DC/DC converters.
2. Motor Drives: Used in driving brushless DC motors and other motor control systems.
3. Class D Audio Amplifiers: Ensures efficient audio signal amplification with low distortion.
4. Renewable Energy Systems: Enhances the performance of solar inverters and wind turbine converters.
5. Industrial Automation: Supports high-speed, reliable operation in industrial control systems.
These applications benefit from its ability to manage high-side and low-side MOSFETs with minimal delay and protection features.