LM5106MM

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IC GATE DRVR HALF-BRIDGE 10VSSOP

  • FabricanteTexas Instruments

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Especificações

Atributo Valor
Part Status Obsolete
DigiKey Programmable Not Verified
Driven Configuration Half-Bridge
Channel Type Synchronous
Number of Drivers 2
Gate Type MOSFET (N-Channel)
Voltage - Supply 8V ~ 14V
Logic Voltage - VIL, VIH 0.8V, 2.2V
Current - Peak Output (Source, Sink) 1.2A, 1.8A
Input Type Non-Inverting
High Side Voltage - Max (Bootstrap) 118 V
Rise / Fall Time (Typ) 15ns, 10ns
Operating Temperature -40°C ~ 125°C (TJ)
Mounting Type Surface Mount
Package / Case 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Supplier Device Package 10-VSSOP
Base Product Number LM5106

Visão Geral

Description

The LM5106MM is a high-speed gate driver designed for driving N-channel MOSFETs in half-bridge configurations, commonly used in power conversion applications, including DC-DC converters and motor drives. It operates from a wide voltage range, typically from 4.5V to 15V, making it suitable for various power supply designs.
Key features include a fast switching capability, allowing for efficient operation with minimal switching losses, and a robust output drive capability up to 1.5A for sourcing and sinking current, enabling rapid turn-on and turn-off of MOSFETs. The LM5106MM also includes built-in dead-time control to prevent cross-conduction in half-bridge configurations, enhancing overall reliability.
The device typically comes in a compact package, which aids in space-saving designs, and is compatible with standard PWM control signals. Its combination of speed, efficiency, and ease of use makes the LM5106MM a popular choice for designers looking to optimize performance in high-frequency applications.

Equivalent

The LM5106MM is a high-speed half-bridge driver. Equivalent products include the MIC4427, TC4427, and IR2110. These alternatives offer similar functionalities in driving MOSFETs and IGBTs with high efficiency. Always check specifications for specific requirements like voltage ratings and switching speeds.

Features

The LM5106MM is a high-speed, dual-channel gate driver designed for driving N-channel MOSFETs and IGBTs in half-bridge applications. Key features include:
1. High and Low-Side Driver: It supports both high-side and low-side gate driving, enabling efficient power conversion.
2. Voltage Ratings: It operates with a supply voltage range of 4.5V to 20V, making it versatile for various applications.
3. Output Drive Capability: The driver can deliver a peak output current of 1.5A, ensuring fast switching speeds for improved efficiency.
4. Dead Time Control: Integrated dead time management prevents shoot-through conditions, enhancing system reliability.
5. Bootstrap Capability: Supports bootstrap operation for high-side driving, allowing the use of low-side supply for high-side gate drive.
6. Under-voltage Lockout (UVLO): UVLO prevents operation under unsafe voltage conditions, protecting the device.
7. Thermal Shutdown: Built-in thermal protection ensures safe operation by disabling the driver during overheating.
These features make the LM5106MM suitable for a variety of applications, including motor control and power supplies.

Pinout

The LM5106MM is a high-voltage gate driver IC with 10 pins. It is designed for driving high-side and low-side MOSFETs in synchronous buck converters and other power applications.
Pin Count and Functions:
1. VDD (Pin 1): Supply voltage for the IC.
2. COM (Pin 2): Ground reference for the IC.
3. BOOT (Pin 3): Bootstrap capacitor connection for high-side driver.
4. SW (Pin 4): Switch node connection (high-side MOSFET source).
5. HS (Pin 5): High-side gate driver output.
6. LS (Pin 6): Low-side gate driver output.
7. RBOOT (Pin 7): Resistor connection for bootstrapping.
8. DIAG (Pin 8): Fault indication output for protection features.
9. VREF (Pin 9): Reference voltage output for external circuitry.
10. GND (Pin 10): Common ground for the IC.
The LM5106MM provides robust performance in driving power MOSFETs with features like fast switching and dead-time control.

Manufacturer

The LM5106MM is manufactured by Texas Instruments (TI), a leading global semiconductor company. Texas Instruments specializes in designing and manufacturing a wide range of electronic components and systems, including analog and digital signal processing chips, microcontrollers, and power management solutions. Founded in 1930, TI has a long history in the electronics industry and is known for its innovation and quality.
The company serves various markets, including automotive, industrial, communications, and consumer electronics, providing products that facilitate advanced functionalities in devices such as smartphones, automotive systems, and smart home technologies. TI is recognized for its commitment to research and development, contributing significantly to advancements in technology and engineering.
The LM5106MM specifically is a gate driver designed for driving high-voltage and high-current power MOSFETs and IGBTs, making it essential for applications in power management and conversion systems. Texas Instruments continues to be a key player in the semiconductor sector, focusing on developing solutions that enhance performance, efficiency, and reliability in electronic design.

Application

The LM5106MM is a high-speed dual gate driver designed for driving N-channel MOSFETs in various applications. Key application areas include:
1. Power Converters: Used in DC-DC converters for efficient power management.
2. Class D Audio Amplifiers: Enhances audio performance by driving the output transistors.
3. Motor Control: Drives MOSFETs in brushless DC motor applications.
4. Switching Power Supplies: Supports high-frequency operation for improved efficiency.
5. Telecommunications: Powers RF amplifiers in communication systems.
Its features enable low propagation delay and high peak current output, making it suitable for demanding applications.

Package

The LM5106MM is packaged in a 10-pin MSOP (Micro Small Outline Package) format. This compact package is designed for surface mounting and is suitable for applications requiring efficient space utilization.

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